A Cmos Image Sensor For Low Light Applications

• doi: 10.1109/ISCAS.2006.1692919
• title: A CMOS image sensor for low light applications
• publisher: IEEE
• isbn: 0-7803-9389-9
• issn: 2158-1525
• partnum: 06CH37717C
• rank: 598
• access_type: LOCKED
• content_type: Conferences
• abstract: We describe and analyze a novel CMOS pixel for high speed, low light imaging applications. The pixel achieves lower dark current and noise and increased gain in comparison with conventional three-transistor, one-photodiode active pixel sensors without sacrificing speed and scalability to large arrays. It accomplishes this by biasing the photodiode of each pixel near zero volts and by separating the photodiode from the floating diffusion integration node. An image sensor with a 256 /spl times/ 256 array of these pixels was designed for a commercially available 0.18 /spl mu/m CMOS technology. The pixel size is 5/spl mu/.m /spl times/ 5/spl mu/m with a fill factor of 31%. The chip area is 3000 /spl mu/m /spl times/ 3000/spl mu/m. 1.8 V and 3.3 V power supplies are used for logic and sensor array, respectively. Differential output and chip level correlated-double sampling are used to suppress fixed pattern noise. Transmission gates with dummy transistors are incorporated into the readout chain to reduce both clock feedthrough and charge injection.
• article_number: 1692919
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1692919
• html_url: https://ieeexplore.ieee.org/document/1692919/
• abstract_url: https://ieeexplore.ieee.org/document/1692919/
• publication_title: 2006 IEEE International Symposium on Circuits and Systems (ISCAS)
• conference_location: Kos, Greece
• conference_dates: 21-24 May 2006
• publication_number: 11145
• is_number: 35661
• publication_year: 2006
• publication_date: 21-24 May 2006
• start_page: 4 pp.
• end_page:
• citing_paper_count: 3
• citing_patent_count: 2
• download_count: 855
• insert_date: 20060911
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Sensor arrays
    • Pixel
    • Photodiodes
    • CMOS technology
    • Logic arrays
    • Image analysis
    • Dark current
    • Active noise reduction
    • Scalability
  • dynamic_index_terms:
    • Low Light
    • Image Sensor
    • Camera Sensor
    • Low Noise
    • Output Level
    • Yield Levels
    • Fill Factor
    • Dark Current
    • Charge Injection
    • Sensor Pixel
    • Low Dark Current
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Dynamic Range
    • Voltage-gated
    • Gate Voltage
    • Translational Level
    • Level Shift
    • Photocurrent
    • Bias Voltage
    • Good Linearity
    • Forward Bias
    • Forward Voltage
    • Drain Current
    • Pixel Array
    • Background Illumination
    • Temporal Noise
    • Reverse Bias Voltage
    • Digital Components
    • Phototransistor
    • Related Artifacts
    • Related Artefacts
    • Input-referred Noise
    • Readout Circuit
    • Conversion Gain
    • Unity Gain
• isbn_formats:
  • format: Print ISBN, value: 0-7803-9389-9, isbnType: Historical
• authors:
  • Author Name: Honghao Ji
    Affiliation: Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, MD, USA
    Author URL: https://ieeexplore.ieee.org/author/37087217772
    ID: 37087217772
    Order: 1
    Author Affiliations:
    • Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, MD, USA
  • Author Name: P.A. Abshire
    Affiliation: Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, MD, USA
    Author URL: https://ieeexplore.ieee.org/author/37270824500
    ID: 37270824500
    Order: 2
    Author Affiliations:
    • Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, MD, USA

Image Sensor

• sensor_type: CMOS
• resolution: 256x256 pixels
• dynamic_range: not specified
• pixel_size: 5 µm x 5 µm
• dark_current: lower than conventional sensors due to design changes

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: reduced by a factor of Nrow, where Nrow is the number of rows
• signal_to_noise_ratio: improved due to low dark current and efficient integration
• sensitivity: suitable for low-light applications
• power_consumption: 3.3 V for the sensor array and 1.8 V for logic
• noise: spatial noise reduced, estimated reset noise of 7 e-

Applications & Benefits

• cell_imaging: designed for high-speed, low-light imaging applications
• benefits: reduced dark current and noise, increased gain, higher efficiency in large arrays without speed sacrifice

Supporting Organizations

• supported_by: University of Maryland, InstituteforSystemsResearch

Manuscript Details

• publication_date: 21-24 May 2006

Relevancy Score

• score: 10

Processed JSON Filename

request_1a8bb316-7411-414f-9852-2dc5b95e21c7-a_cmos_image_sensor_for_low_light_applications.json