A Cmos Image Sensor Based On Unified Pixel Architecture With Timedivision
Multiplexing Scheme For Color And Depth Image Acquisition
- doi: 10.1109/JSSC.2012.2214179
-
title: A CMOS Image Sensor Based on Unified Pixel
Architecture With Time-Division Multiplexing Scheme for Color and Depth
Image Acquisition
- publisher: IEEE
- isbn:
- issn: 1558-173X
- rank: 541
- access_type: LOCKED
- content_type: Journals
-
abstract: We propose a CMOS image sensor with
time-division multiplexing pixel architecture using standard
pinned-photodiode for capturing 2-D color image as well as extracting
3-D depth information of a target object. The proposed pixel can
alternately provide both color and depth images in each frame. Two split
photodiode and four transfer gates in each pixel improve the transfer
speed of generated electrons to be capable of demodulating a
high-frequency time-of-flight signal. In addition, four-shared pixel
architecture acquires a color image with high spatial resolution and
generates a reliable depth map by inherent binning operation in charge
domain. A 712 496 pixel array has been fabricated using a 0.11μm
standard CMOS imaging process and fully characterized. A 6m pixel with
34.5% aperture ratio can be operated at 10-MHz modulation frequency with
70% demodulation contrast. We have successfully captured both images of
exactly same scene from the fabricated test chip. It shows a depth
uncertainty of less than 60 mm and a linearity error of about 2% between
1 and 3 m distance with 50-ms integration time. Moreover, high-gain
readout operation enables to improve the performance, achieving about
43-mm depth uncertainty at 3 m.
- article_number: 6327619
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6327619
-
html_url:
https://ieeexplore.ieee.org/document/6327619/
-
abstract_url:
https://ieeexplore.ieee.org/document/6327619/
-
publication_title: IEEE Journal of Solid-State Circuits
- conference_location:
- conference_dates:
- publication_number: 4
- is_number: 6339059
- publication_year: 2012
- publication_date: Nov. 2012
- start_page: 2834
- end_page: 2845
- citing_paper_count: 57
- citing_patent_count: 28
- download_count: 2787
- insert_date: 20121009
-
index_terms:
-
ieee_terms:
- Logic gates
- Image color analysis
- Color
- Arrays
- Standards
- Demodulation
- CMOS image sensors
-
author_terms:
- Binning operation
- charge transfer speed
- CMOS image sensor
- demodulation pixel
- depth sensor
- four-shared architecture
- high-gain readout
- multiresolution
- range finding
- standard pinned-photodiode
- three-dimensional (3-D) image sensor
- time-division
- time-of-flight (TOF)
-
dynamic_index_terms:
- Color Images
- Image Sensor
- Camera Sensor
- Depth Images
- Time-division Multiplexing
- Spatial Resolution
- Integration Time
- Modulation Frequency
- Target Object
- Depth Map
- Function Of Depth
- Depth Information
- Pixel Array
- Transfer Speed
- Standard CMOS
- Raw Data
- Pixel Size
- 3D Images
- Slow Speed
- Imaging Device
- Depth Data
- Single-photon Avalanche Diode
- Sensor Prototype
- Dual Operation
- IR Light
- Time-to-digital Converter
- Storage Nodes
- Pixel Color
- Color Of Each Pixel
- Colour Pixels
- Types Of Pixels
- Conversion Gain
- Image Processing Algorithms
-
authors:
-
Author Name: Seong-Jin Kim
Affiliation: Institute of Microelectronics, Agency
for Science, Technology and Research, Singapore
Author URL:
https://ieeexplore.ieee.org/author/38183923800
ID: 38183923800
Order: 1
Author Affiliations:
-
Institute of Microelectronics, Agency for Science, Technology
and Research, Singapore
-
Advanced Media Laboratory, Samsung Advanced Institute of
Technology, Yongin si, South Korea
-
Author Name: James D. K. Kim
Affiliation: Advanced Media Laboratory, Samsung
Advanced Institute of Technology, Yongin si, South Korea
Author URL:
https://ieeexplore.ieee.org/author/38491134900
ID: 38491134900
Order: 2
Author Affiliations:
-
Advanced Media Laboratory, Samsung Advanced Institute of
Technology, Yongin si, South Korea
-
Author Name: Byongmin Kang
Affiliation: Advanced Media Laboratory, Samsung
Advanced Institute of Technology, Yongin si, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37537058700
ID: 37537058700
Order: 3
Author Affiliations:
-
Advanced Media Laboratory, Samsung Advanced Institute of
Technology, Yongin si, South Korea
-
Author Name: Keechang Lee
Affiliation: Advanced Media Laboratory, Samsung
Advanced Institute of Technology, Yongin si, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37540313800
ID: 37540313800
Order: 4
Author Affiliations:
-
Advanced Media Laboratory, Samsung Advanced Institute of
Technology, Yongin si, South Korea
Image Sensor
- sensor_type: CMOS
- resolution: 712496 pixels
- dynamic_range: not specified
- pixel_size: 6 µm
- dark_current: not specified
Optical Data
- focal_length: 6.5 mm
- aperture: 34.5%
- field_of_view: not specified
- distortion: not specified
Performance Metrics
- frame_rate: 18 fps (color), 6.4 fps (depth)
- shutter_speed: 50 ms
- power_consumption: 53 mW (color), 352 mW (depth)
-
noise: depth uncertainty less than 60 mm with standard
reading, 43 mm with high gain readout
Applications & Benefits
-
cell_imaging: The sensor is capable of capturing both
color and depth images for applications in robotics, security,
automotive, and interactive gaming.
-
benefits: Enables real-time 3-D image capturing and
depth extraction without complicated postprocessing.
Supporting Organizations
-
supported_by: Samsung Advanced Institute of Technology,
A*STAR, Singapore
Manuscript Details
- publication_date: Nov. 2012
Relevancy Score
- score: 10
-
missing_fields:
- quantum efficiency
- readout speed
- noise sources
- analog-to-digital conversion techniques
- microlenses
- on-chip colour filters
- global or rolling shutters
- backside illumination
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