A Cmos Fully Integrated 860Ghz Terahertz Sensor
- doi: 10.1109/TTHZ.2017.2692040
-
title: A CMOS Fully Integrated 860-GHz Terahertz Sensor
- publisher: IEEE
- isbn:
- issn: 2156-3446
- rank: 540
- access_type: OPEN_ACCESS
- content_type: Journals
-
abstract: This paper proposes a CMOS fully integrated
860-GHz terahertz (THz) sensor. The sensor integrates a single-NMOS THz
detector, a low-noise chopper instrumentation amplifier and a
high-resolution ΔΣ-ADC. The detector consists of a novel on-chip
grounded patch antenna and a source-feeding NMOS field-effect transistor
(FET) of the minimum size. A microstrip transmission line is designed to
improve the power transfer efficiency between the antenna and the NMOS
transistor. A notch filter is proposed to improve detector performance.
To enable the theoretical analysis of the operation of the THz detector
and the formulation of design guidelines, we propose a THz-FET device
model in which a source-coupled FET for THz detection is modeled as a dc
voltage source with a resistor. The model indicates that an FET with the
minimum physical dimensions for a given CMOS process can produce the
maximum output signal. The sensor is implemented in a 180-nm standard
CMOS process. The detector achieves a voltage responsivity of 3.3 kV/W
and an NEP of 106 pW/Hz1/2 at 860 GHz. The sensor noise and the readout
circuit noise are 10.81 and 2.03 μVrms, respectively. The sensor obtains
clear raster-scanning transmission images under continuous THz
illumination.
- article_number: 7926419
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7926419
-
html_url:
https://ieeexplore.ieee.org/document/7926419/
-
abstract_url:
https://ieeexplore.ieee.org/document/7926419/
-
publication_title: IEEE Transactions on Terahertz
Science and Technology
- conference_location:
- conference_dates:
- publication_number: 5503871
- is_number: 7962900
- publication_year: 2017
- publication_date: July 2017
- start_page: 455
- end_page: 465
- citing_paper_count: 68
- citing_patent_count: 0
- download_count: 5495
- insert_date: 20170511
-
index_terms:
-
ieee_terms:
- Detectors
- Semiconductor device modeling
- Logic gates
- MOSFET
- Resistors
-
author_terms:
- ADC
- CMOS
- continuous wave
- notch filter
- readout circuit
- submillimeter wave
- terahertz (THz) detector
- THz device model
- THz imaging
- THz sensor
-
dynamic_index_terms:
- Terahertz Sensor
- Transmission Line
- Field-effect Transistors
- Notch Filter
- Sensor Noise
- Voltage Response
- Low-noise Amplifier
- CMOS Process
- Minimum Dimension
- Dc Voltage Source
- Readout Circuit
- Ground Plane
- Floor Plan
- Metal Layer
- Circuit Design
- Impedance Matching
- CMOS Technology
- Antenna Performance
- Antenna Operating
- Terahertz Imaging
- Terahertz Signal
- Simulated Impedance
- Top Metal Layer
- Gate Bias
- Antenna Impedance
- Center Of The Antenna
- Relative Change Values
- Detector Output
- Quarter Wavelength
-
authors:
-
Author Name: Zhao-yang Liu
Affiliation: State Key Laboratory of Superlattices
and Microstructures, Chinese Academy of Sciences; University of
Chinese Academy of Sciences, Beijing, China
Author URL:
https://ieeexplore.ieee.org/author/37085708907
ID: 37085708907
Order: 1
Author Affiliations:
-
State Key Laboratory of Superlattices and Microstructures,
Chinese Academy of Sciences; University of Chinese Academy of
Sciences, Beijing, China
-
Author Name: Li-yuan Liu
Affiliation: State Key Laboratory of Superlattices
and Microstructures, Chinese Academy of Sciences; University of
Chinese Academy of Sciences, Beijing, China
Author URL:
https://ieeexplore.ieee.org/author/37085745851
ID: 37085745851
Order: 2
Author Affiliations:
-
State Key Laboratory of Superlattices and Microstructures,
Chinese Academy of Sciences; University of Chinese Academy of
Sciences, Beijing, China
-
Author Name: Jie Yang
Affiliation: State Key Laboratory of Superlattices
and Microstructures, Chinese Academy of Sciences; University of
Chinese Academy of Sciences, Beijing, China
Author URL:
https://ieeexplore.ieee.org/author/37089545294
ID: 37089545294
Order: 3
Author Affiliations:
-
State Key Laboratory of Superlattices and Microstructures,
Chinese Academy of Sciences; University of Chinese Academy of
Sciences, Beijing, China
-
Author Name: Nan-jian Wu
Affiliation: State Key Laboratory of Superlattices
and Microstructures, Chinese Academy of Sciences; University of
Chinese Academy of Sciences, Beijing, China
Author URL:
https://ieeexplore.ieee.org/author/37286754000
ID: 37286754000
Order: 4
Author Affiliations:
-
State Key Laboratory of Superlattices and Microstructures,
Chinese Academy of Sciences; University of Chinese Academy of
Sciences, Beijing, China
Image Sensor
- sensor_type: CMOS
- resolution: —
- dynamic_range: —
- pixel_size: 0.18 μm and 0.24 μm
- dark_current: —
Optical Data
- focal_length: —
- aperture: —
- field_of_view: —
- distortion: —
Performance Metrics
- frame_rate: —
- signal_to_noise_ratio: 80 dB
- sensitivity: —
- shutter_speed: —
- power_consumption: —
- noise: 10.81 µVrms
Applications & Benefits
-
cell_imaging: Terahertz imaging techniques for security
checks and non-destructive testing.
-
benefits: Integration of the sensor allows for compact
design and potential use in portable devices.
Supporting Organizations
-
supported_by: National Natural Science Foundation of
China, National Key Research and Development Program of China, Beijing
Natural Science Foundation.
Manuscript Details
- publication_date: July 2017
Relevancy Score
- score: 8
-
missing_fields:
- resolution
- dynamic_range
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- sensitivity
- shutter_speed
- power_consumption
Processed JSON Filename
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