A Cmos Capacitive Pressure Sensor Chip For Fingerprint Detection

• doi: 10.1109/TRANSDUCERS.2011.5969123
• title: A CMOS capacitive pressure sensor chip for fingerprint detection
• publisher: IEEE
• isbn: 978-1-4577-0155-9
• issn: 2159-547X
• partnum: 11TH9206
• rank: 586
• access_type: LOCKED
• content_type: Conferences
• abstract: Biometric techniques, such as fingerprint detection, can be applied to identify a specific user for security and safety reasons. We present a capacitive fingerprint sensor that can detect the difference of pressures induced by the ridges and valleys of a finger tip. Post-CMOS fabrication of the 8×32 sensor array is conducted based on wet etch of CMOS metal layers without requiring additional thin-film deposition and patterning. The size of each sensing pixel is 65×65 μm2. The measured sensor sensitivity was 0.39 fF/MPa. Part of the fingerprint image was successfully produced by the CMOS sensor chip.
• article_number: 5969123
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5969123
• html_url: https://ieeexplore.ieee.org/document/5969123/
• abstract_url: https://ieeexplore.ieee.org/document/5969123/
• publication_title: 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference
• conference_location: Beijing, China
• conference_dates: 5-9 June 2011
• publication_number: 5958191
• is_number: 5969118
• publication_year: 2011
• publication_date: 5-9 June 2011
• start_page: 24
• end_page: 27
• citing_paper_count: 5
• citing_patent_count: 2
• download_count: 1134
• insert_date: 20110801
• index_terms:
  • ieee_terms:
    • Sensors
    • Fingerprint recognition
    • Fingers
    • Capacitance
    • CMOS integrated circuits
    • Arrays
    • Fabrication
  • author_terms:
    • CMOS
    • capacitive sensor
    • tactile
    • fingerprint
  • dynamic_index_terms:
    • Sensor Chip
    • Fingerprint Detection
    • Thin Films
    • Alumina
    • Safety Reasons
    • Sensor Array
    • Capacitive Sensor
    • Electrode
    • Output Signal
    • Current Source
    • Current Regulations
    • Cantilever
    • Changes In Capacity
    • Capacitance Change
    • Optical Sensors
    • CMOS Process
    • polySia
    • Polycrystalline Silicon
    • Polysilicon
    • Constant Current Source
    • Protrusive Structures
    • Switching Transistors
    • Piezoresistive
• isbn_formats:
  • format: CD, value: 978-1-4577-0155-9, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4577-0157-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4577-0156-6, isbnType: New-2005
• authors:
  • Author Name: Yung-Shih Hsiung
    Affiliation: Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37950447900
    ID: 37950447900
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
  • Author Name: Michael S.-C. Lu
    Affiliation: Institute of NanoEngineering and Microsystems, National Tsing Hua University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37276887400
    ID: 37276887400
    Order: 2
    Author Affiliations:
    • Institute of NanoEngineering and Microsystems, National Tsing Hua University, Hsinchu, Taiwan

Image Sensor

• sensor_type: CMOS
• resolution: No specific resolution mentioned in the text
• dynamic_range: No specific dynamic range mentioned
• pixel_size: 65 × 65 μm²
• dark_current: No specific value mentioned

Optical Data

• focal_length: No specific value mentioned
• aperture: No specific value mentioned
• field_of_view: No specific value mentioned
• distortion: No specific value mentioned

Performance Metrics

• frame_rate: No specific frame rate mentioned
• signal_to_noise_ratio: Not specifically mentioned, but noted signal-to-noise ratio improvement through integration
• sensitivity: Sensor sensitivity was 0.39 fF/MPa
• shutter_speed: No specific value mentioned
• power_consumption: No specific value mentioned
• noise: Not explicitly stated, but discussed in context with signal-to-noise ratio and image quality

Applications & Benefits

• cell_imaging: Not specifically mentioned, but relates to fingerprint detection applications as a biometric security measure
• benefits: Integration of capacitive sensors into CMOS processes without additional thin-film deposition, allowing for compact designs and reduced complexity.

Supporting Organizations

• supported_by: National Science Council, Taiwan; National Chip Implementation Center; National Center for High-Performance Computing

Manuscript Details

• publication_date: 5-9 June 2011

Relevancy Score

• score: 8
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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