A Broadband Thz Imager In A Lowcost Cmos Technology

• doi: 10.1109/ISSCC.2011.5746211
• title: A broadband THz imager in a low-cost CMOS technology
• publisher: IEEE
• isbn: 978-1-61284-301-8
• issn: 0193-6530
• partnum: 11CH38829
• rank: 1012
• access_type: LOCKED
• content_type: Conferences
• abstract: The paper demonstrates a complete acquisition chain of a 300GHz to 1THz image sensor with on-chip multiplexing in a 0.13μm bulk silicon CMOS technology. The pixel consumes less than 100μW and has a responsivity of 90kV/W at 300GHz and of 1.8kV/W at 1.05THz respectively. High resolution and contrast THz images revealing the inner structure of tree leaves are presented. These results show that multi-frequency and room temperature imaging systems are possible in cost-effective CMOS technologies.
• article_number: 5746211
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5746211
• html_url: https://ieeexplore.ieee.org/document/5746211/
• abstract_url: https://ieeexplore.ieee.org/document/5746211/
• publication_title: 2011 IEEE International Solid-State Circuits Conference
• conference_location: San Francisco, CA, USA
• conference_dates: 20-24 Feb. 2011
• publication_number: 5740653
• is_number: 5746170
• publication_year: 2011
• publication_date: 20-24 Feb. 2011
• start_page: 42
• end_page: 43
• citing_paper_count: 69
• citing_patent_count: 3
• download_count: 2610
• insert_date: 20110407
• index_terms:
  • ieee_terms:
    • Pixel
    • Imaging
    • Logic gates
    • Detectors
    • CMOS integrated circuits
    • Arrays
    • Noise
  • dynamic_index_terms:
    • CMOS Technology
    • Terahertz Imaging
    • Detector Response
    • Square Wave
    • Image Sensor
    • Camera Sensor
    • Field-effect Transistors
    • Non-destructive Testing
    • Non-destructive Analysis
    • Non-destructive Evaluation
    • Low-frequency Signals
    • Gate Bias
    • Thin Materials
    • Silicon-on-insulator
    • Buried Oxide
    • Gate Length
    • Plasma Waves
    • Shift Register
    • Personalized Screening
    • Frequency Multiplier
    • Output Pixel
    • Readout Electronics
• isbn_formats:
  • format: CD, value: 978-1-61284-301-8, isbnType: New-2005
  • format: Print ISBN, value: 978-1-61284-303-2, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-61284-302-5, isbnType: New-2005
• authors:
  • Author Name: Franz Schuster
    Affiliation: Université Montpellier II, Montpellier, France
    Author URL: https://ieeexplore.ieee.org/author/37606183000
    ID: 37606183000
    Order: 1
    Author Affiliations:
    • Université Montpellier II, Montpellier, France
    • CEA-LETI/MINATEC, Grenoble, France
  • Author Name: Hadley Videlier
    Affiliation: Université Montpellier II, Montpellier, France
    Author URL: https://ieeexplore.ieee.org/author/37547752000
    ID: 37547752000
    Order: 2
    Author Affiliations:
    • Université Montpellier II, Montpellier, France
  • Author Name: Antoine Dupret
    Affiliation: CEA-LETI/MINATEC, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/38330912600
    ID: 38330912600
    Order: 3
    Author Affiliations:
    • CEA-LETI/MINATEC, Grenoble, France
  • Author Name: Dominique Coquillat
    Affiliation: Université Montpellier II, Montpellier, France
    Author URL: https://ieeexplore.ieee.org/author/37547688900
    ID: 37547688900
    Order: 4
    Author Affiliations:
    • Université Montpellier II, Montpellier, France
  • Author Name: Maciej Sakowicz
    Affiliation: Université Montpellier II, Montpellier, France
    Author URL: https://ieeexplore.ieee.org/author/37547686400
    ID: 37547686400
    Order: 5
    Author Affiliations:
    • Université Montpellier II, Montpellier, France
  • Author Name: Jean-Pierre Rostaing
    Affiliation: CEA-LETI/MINATEC, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37268562100
    ID: 37268562100
    Order: 6
    Author Affiliations:
    • CEA-LETI/MINATEC, Grenoble, France
  • Author Name: Michaël Tchagaspanian
    Affiliation: CEA-LETI/MINATEC, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/38075507000
    ID: 38075507000
    Order: 7
    Author Affiliations:
    • CEA-LETI/MINATEC, Grenoble, France
  • Author Name: Benoît Giffard
    Affiliation: CEA-LETI/MINATEC, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37294012200
    ID: 37294012200
    Order: 8
    Author Affiliations:
    • CEA-LETI/MINATEC, Grenoble, France
  • Author Name: Wojciech Knap
    Affiliation: Université Montpellier II, Montpellier, France
    Author URL: https://ieeexplore.ieee.org/author/37268290800
    ID: 37268290800
    Order: 9
    Author Affiliations:
    • Université Montpellier II, Montpellier, France

Image Sensor

• sensor_type: CMOS
• resolution: 3x4 pixels (individual pixel size 190x190μm²)
• dynamic_range: Not mentioned
• pixel_size: 190μm
• dark_current: Not specified

Optical Data

• focal_length: Not mentioned
• aperture: Not mentioned
• field_of_view: Not mentioned
• distortion: Not mentioned

Performance Metrics

• frame_rate: Video-rate imaging
• sensitivity: 90kV/W at 300GHz
• shutter_speed: Not mentioned
• power_consumption: <100μW
• noise: 16nV/Hz^0.5 at 30kHz

Applications & Benefits

• cell_imaging: Medical imaging, security screening, non-destructive testing
• benefits: Cost-effective, high resolution and contrast imaging at room temperature across a range of THz frequencies

Supporting Organizations

• supported_by: CEA-LETI-MINATEC, Université Montpellier 2 -CNRS UMR

Manuscript Details

• publication_date: 20-24 Feb. 2011

Relevancy Score

• score: 10

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