A Backsideilluminated 35 M Pixel With 86 Demodulation Contrast At 10 V Voltage Swing For Indirect Timeofflight Image Sensors

• doi: 10.1109/TED.2023.3298311
• title: A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 521
• access_type: LOCKED
• content_type: Journals
• abstract: This article presents a $3.5 ~\mu \text{m}$ stacked backside-illuminated (BSI) indirect time-of-flight (i-ToF) pixel fabricated in a 65-nm CMOS image sensors (CIS) process. Transfer gate-induced lateral electric field control of charge transfer is one of the most relied techniques for implementing i-ToF image sensors. However, the transfer gate as modulated gate usually needs a high voltage swing to achieve high demodulation contrast (DC). We introduce a photonic demodulator pixel that utilizes a new lateral electric field modulation technology to achieve a 1.0 V modulation voltage swing while maintaining a high DC of 86% at 100 MHz modulation frequency. The proposed method employs a gate-controlled junction field effect transistor (JFET) to control the drain-induced barrier lowering (DIBL) effect to modulate the lateral electric field. In addition, the photonic demodulator can be also fully depleted with an N-type epitaxy for 22% quantum efficiency (QE) enhancement at 940 nm. This development can greatly lower the power consumption for high-resolution i-ToF sensor applications.
• article_number: 10206431
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10206431
• html_url: https://ieeexplore.ieee.org/document/10206431/
• abstract_url: https://ieeexplore.ieee.org/document/10206431/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 10227840
• publication_year: 2023
• publication_date: Sept. 2023
• start_page: 4712
• end_page: 4718
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 465
• insert_date: 20230803
• index_terms:
  • ieee_terms:
    • Demodulation
    • Photonics
    • Electric potential
    • Logic gates
    • Power demand
    • JFETs
    • Electrostatics
  • author_terms:
    • CMOS image sensors (CISs)
    • full depletion
    • gate-controlled junction field effect transistor (JFET)
    • indirect time-of-flight (i-ToF)
    • photonic demodulator pixel
  • dynamic_index_terms:
    • Time-of-flight
    • Image Sensor
    • Camera Sensor
    • Voltage Swing
    • High Voltage
    • Higher Tendency
    • Power Consumption
    • Modulation Frequency
    • Quantum Efficiency
    • Field-effect Transistors
    • Voltage Mode
    • Lateral Field
    • Electrical Modulation
    • Horizontal Plane
    • Horizontal Direction
    • Horizontal Distance
    • Electrostatic Potential
    • Electric Potential
    • Low Voltage
    • Peak Current
    • Light Detection And Ranging
    • Lidar
    • Depth Images
    • Potential Gradient
    • Lateral Transfer
    • Conventional Structure
    • Single-photon Avalanche Diode
    • Test Chip
    • Strong Inversion
    • PIN Photodiode
    • Fermi Dirac
    • Fermi Function
    • Fermi Dirac Distribution
    • Fermi Distribution
    • Inductive Load
    • Load Capacitance
    • Depletion Conditions
    • State Of Depletion
• authors:
  • Author Name: Congzhen Hu
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37088902624
    ID: 37088902624
    Order: 1
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Bing Zhang
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37086880421
    ID: 37086880421
    Order: 2
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Youze Xin
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37087230769
    ID: 37087230769
    Order: 3
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Chi Wang
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37089389061
    ID: 37089389061
    Order: 4
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Yiyun Xie
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37089625499
    ID: 37089625499
    Order: 5
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Pengfei Hu
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37089890634
    ID: 37089890634
    Order: 6
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Zungui Ke
    Affiliation: Southwest Institute of Technical Physics, Chengdu, China
    Author URL: https://ieeexplore.ieee.org/author/37089627388
    ID: 37089627388
    Order: 7
    Author Affiliations:
    • Southwest Institute of Technical Physics, Chengdu, China
  • Author Name: Li Geng
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37427054500
    ID: 37427054500
    Order: 8
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China

Image Sensor

• sensor_type: CMOS
• resolution: VGA (640x480)
• dynamic_range: 800 mV
• pixel_size: 3.5 µm
• dark_current: low

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 100 MHz
• power_consumption: 0.25 µW/pixel at 100 MHz

Applications & Benefits

• cell_imaging: Depth imaging sensors can be used in areas like solid-state LiDAR, robotics vision, biomedical engineering, and autonomous navigation.
• benefits: High resolution, small precision error, low power consumption, competitive DC performance, and reduced power consumption per pixel.

Supporting Organizations

• supported_by: National Natural Science Foundation of China, Shaanxi Key Research and Development Plan

Manuscript Details

• publication_date: Sept. 2023

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

request_1ebe4e52-c45e-400d-8036-797f0b87d9d5-a_backsideilluminated_35_m_pixel_with_86_demodulation_contrast_at_10_v_voltage_swing_for_indirect_timeofflight_image_sensors.json