A Backilluminated Spad Fabricated With 40 Nm Cmos Image Sensor Technology Achieving Near 40 Pdp At 940 Nm

• doi: 10.1109/JSTQE.2023.3272777
• title: A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm
• publisher: IEEE
• isbn:
• issn: 1558-4542
• rank: 520
• access_type: OPEN_ACCESS
• content_type: Journals
• abstract: This article introduces a back-illuminated (BI) single-photon avalanche diode (SPAD) based on 40 nm CMOS image sensor (CIS) technology which is the most advanced technology node for the fabrication of a SPAD up to date. It's based on a P-well (PW) and deep N-well (DNW) junction, and the DNW is deeply implanted to form a wide absorption region resulting in very high and wide photon detection probability (PDP). Thanks to the retrograde DNW, the premature edge breakdown phenomenon is completely prevented and the whole area of the planar junction becomes a high-efficient avalanche multiplication region. In addition, an anti-reflection coating on the backside of the SPAD and a metal reflector at the bottom reduce the reflection of incoming photons and improve the efficiency at long wavelengths, respectively. With the most advanced CIS technology for BI SPADs, the presented SPAD accomplishes a dark count rate (DCR) of 70 cps/µm2, peak PDP of 81% at 675 nm, and PDP of 39% at 940 nm. The timing jitter is 79 ps full width at half-maximum width (FWHM), which is the best timing jitter performance among BI SPADs reported so far. All the values are obtained with the excess bias voltage of 6 V.
• article_number: 10114805
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10114805
• html_url: https://ieeexplore.ieee.org/document/10114805/
• abstract_url: https://ieeexplore.ieee.org/document/10114805/
• publication_title: IEEE Journal of Selected Topics in Quantum Electronics
• conference_location:
• conference_dates:
• publication_number: 2944
• is_number: 10363134
• publication_year: 2024
• publication_date: Jan.-Feb. 2024
• start_page: 1
• end_page: 7
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 2187
• insert_date: 20230503
• index_terms:
  • ieee_terms:
    • Single-photon avalanche diodes
    • Junctions
    • CMOS technology
    • Photonics
    • Electric breakdown
    • Measurement by laser beam
    • Timing jitter
    • Avalanche photodiodes
    • Integrated optics
    • Photodetectors
    • Image sensors
    • Wafer scale integration
  • author_terms:
    • Avalanche photodiode (APD)
    • back-illuminated single-photon avalanche diode (SPAD)
    • CMOS image sensor (CIS) technology
    • detector
    • diode
    • geiger-mode avalanche photodiode (G-APD)
    • high-volume manufacturing
    • integrated optics device
    • integrated optoelectronics
    • integration of photonics in standard CMOS technology
    • light detection and ranging (LiDAR)
    • near infrared (NIR)
    • optical sensing
    • optical sensor
    • photodetector
    • photodiode
    • photomultiplier
    • RGB-D sensor
    • semiconductor device
    • sensor
    • silicon
    • wafer-scale integration
  • dynamic_index_terms:
    • Sensor Technology
    • Single-photon Avalanche Diode
    • Image Sensor Technology
    • CMOS Image Sensor Technology
    • Technological Advances
    • Wider Region
    • Bias Voltage
    • Technology Node
    • Timing Jitter
    • Avalanche Diode
    • Antireflection Coatings
    • Dark Count Rate
    • Active Area
    • Oscilloscope
    • Light Detection And Ranging
    • Lidar
    • I-V Curves
    • Current Voltage Characteristics
    • I-V Characteristics
    • Dead Time
    • Role In Applications
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Time-correlated Single-photon Counting
    • TCSPC
    • TCAD Simulation
    • Fluorescence Lifetime Imaging Microscopy
    • FLIM
    • Fluorescence Lifetime Imaging
    • CMOS Technology
    • Reverse Bias Voltage
• authors:
  • Author Name: Eunsung Park
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37089923696
    ID: 37089923696
    Order: 1
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Won-Yong Ha
    Affiliation: Institute of Electrical and Micro Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37089925842
    ID: 37089925842
    Order: 2
    Author Affiliations:
    • Institute of Electrical and Micro Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
  • Author Name: Hyo-Sung Park
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37085441910
    ID: 37085441910
    Order: 3
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Doyoon Eom
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37089926565
    ID: 37089926565
    Order: 4
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Hyun-Seung Choi
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37089774413
    ID: 37089774413
    Order: 5
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Dae-Hwan Ahn
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37085828240
    ID: 37085828240
    Order: 6
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
  • Author Name: Woo-Young Choi
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37281363600
    ID: 37281363600
    Order: 7
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Myung-Jae Lee
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37598674000
    ID: 37598674000
    Order: 8
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 5 µm
• dark_current: below 1 pA

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Used in various applications including biophotonics, fluorescence lifetime imaging, and near-infrared optical tomography
• benefits: High sensitivity and low dark count rate, enabling large arrays and monolithic integration with on-chip electronics.

Supporting Organizations

• supported_by: Korea Institute of Science and Technology, National Research Foundation of Korea, Korea Evaluation Institute of Industrial Technology

Manuscript Details

• publication_date: Jan.-Feb. 2024

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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