A 76 X 77Mmsup 2 1685 Million Pixel Cmos Aps Image Sensor

• doi: 10.1109/VLSIC.2006.1705291
• title: A 76 x 77mm/sup 2/, 16.85 Million Pixel CMOS APS Image Sensor
• publisher: IEEE
• isbn: 1-4244-0006-6
• issn: 2158-5636
• rank: 508
• access_type: LOCKED
• content_type: Conferences
• abstract: A 16.85 million pixel (4,096 times 4,114), single die (76mm times 77mm) CMOS active pixel sensor (APS) image sensor with 1.35Me- pixel well-depth was designed, fabricated, and tested in a 0.5mum CMOS process with a stitching option. A hybrid photodiode-photogate (HPDPG) APS pixel technology was developed. Pixel pitch was 18mum. The developed image sensor was the world's largest single-die CMOS image sensor fabricated on a 6-inch silicon wafer
• article_number: 1705291
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1705291
• html_url: https://ieeexplore.ieee.org/document/1705291/
• abstract_url: https://ieeexplore.ieee.org/document/1705291/
• publication_title: 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.
• conference_location: Honolulu, HI, USA
• conference_dates: 15-17 June 2006
• publication_number: 11174
• is_number: 35987
• publication_year: 2006
• publication_date: 15-17 June 2006
• start_page: 19
• end_page: 20
• citing_paper_count: 5
• citing_patent_count: 0
• download_count: 367
• insert_date: 20070220
• index_terms:
  • ieee_terms:
    • Pixel
    • CMOS image sensors
    • Image sensors
    • Sensor arrays
    • CMOS process
    • Circuits
    • Decoding
    • CMOS technology
    • Fabrication
    • Digital control
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Active Pixel Sensor
    • Pixel Pitch
    • Sensor Pixel
    • Printed Circuit Board
    • Pixel Array
• isbn_formats:
  • format: Print ISBN, value: 1-4244-0006-6, isbnType: Historical
• authors:
  • Author Name: S. Ay
    Affiliation: Micron Technology, Inc., Pasadena, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37326790500
    ID: 37326790500
    Order: 1
    Author Affiliations:
    • Micron Technology, Inc., Pasadena, CA, USA
  • Author Name: E. Fossum
    Affiliation: Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37326789400
    ID: 37326789400
    Order: 2
    Author Affiliations:
    • Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, CA, USA

Image Sensor

• sensor_type: CMOS
• resolution: 4096x4114
• dynamic_range: 75dB
• pixel_size: 18µm x 18µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 1.25 fps
• power_consumption: 500mW
• noise: 240e-

Applications & Benefits

• cell_imaging: Not specified
• benefits: Achieves large pixel FWC (>1 million electron) and large-array format (>16 megapixels) with low power consumption.

Supporting Organizations

• supported_by: U.S. NASA, Micron Technology, Inc., University of Arizona

Manuscript Details

• publication_date: 15-17 June 2006

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • cell_imaging

Processed JSON Filename

request_29b57c36-41e8-469c-9289-5fbe660d3e5a-a_76_x_77mmsup_2_1685_million_pixel_cmos_aps_image_sensor.json