A 60 Mw 10 B Cmos Image Sensor With Columntocolumn Fpn Reduction

• doi: 10.1109/ISSCC.2000.839712
• title: A 60 mW 10 b CMOS image sensor with column-to-column FPN reduction
• publisher: IEEE
• isbn: 0-7803-5853-8
• issn: 0193-6530
• partnum: 00CH37056
• rank: 478
• access_type: LOCKED
• content_type: Conferences
• abstract: A 60 mW 10b 660(H)/spl times/490(v) pixel digital CMOS image sensor with column-to-column FPN reduction introduces the double inverting amplifier with double clamp circuit for reduction of column-to-column fixed pattern noise (dark FPN and light FPN). It operates with a 3.3 V power supply and has 60 mW power consumption. This sensor is uses 0.6 /spl mu/m, triple-poly-silicon, double-metal CMOS technology.
• article_number: 839712
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=839712
• html_url: https://ieeexplore.ieee.org/document/839712/
• abstract_url: https://ieeexplore.ieee.org/document/839712/
• publication_title: 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056)
• conference_location: San Francisco, CA, USA
• conference_dates: 9-9 Feb. 2000
• publication_number: 6780
• is_number: 18154
• publication_year: 2000
• publication_date: 9-9 Feb. 2000
• start_page: 108
• end_page: 109
• citing_paper_count: 37
• citing_patent_count: 1
• download_count: 1407
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Clamps
    • Threshold voltage
    • Timing
    • Circuits
    • Latches
    • Pixel
    • Energy consumption
    • Signal processing
    • Delay
  • dynamic_index_terms:
    • Power Consumption
    • Photodiode
    • Changes In Output
    • Changes In Yield
    • Threshold Voltage
    • Voltage Signal
    • Amplification Stage
    • Amplifier Input
• isbn_formats:
  • format: Print ISBN, value: 0-7803-5853-8, isbnType: Historical
• authors:
  • Author Name: T. Sugiki
    Affiliation: Toshiba AVE Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37294851800
    ID: 37294851800
    Order: 1
    Author Affiliations:
    • Toshiba AVE Corporation, Kanagawa, Japan
  • Author Name: S. Ohsawa
    Affiliation: Toshiba Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37356519900
    ID: 37356519900
    Order: 2
    Author Affiliations:
    • Toshiba Corporation, Kanagawa, Japan
  • Author Name: H. Miura
    Affiliation: Toshiba AVE Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37447006400
    ID: 37447006400
    Order: 3
    Author Affiliations:
    • Toshiba AVE Corporation, Kanagawa, Japan
  • Author Name: M. Sasaki
    Affiliation: Toshiba Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37384752100
    ID: 37384752100
    Order: 4
    Author Affiliations:
    • Toshiba Corporation, Kanagawa, Japan
  • Author Name: N. Nakamura
    Affiliation: Toshiba Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37275538600
    ID: 37275538600
    Order: 5
    Author Affiliations:
    • Toshiba Corporation, Kanagawa, Japan
  • Author Name: I. Inoue
    Affiliation: Toshiba Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37439338200
    ID: 37439338200
    Order: 6
    Author Affiliations:
    • Toshiba Corporation, Kanagawa, Japan
  • Author Name: M. Hoshino
    Affiliation: Toshiba AVE Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37087983338
    ID: 37087983338
    Order: 7
    Author Affiliations:
    • Toshiba AVE Corporation, Kanagawa, Japan
  • Author Name: Y. Tomizawa
    Affiliation: Toshiba Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37087982565
    ID: 37087982565
    Order: 8
    Author Affiliations:
    • Toshiba Corporation, Kanagawa, Japan
  • Author Name: T. Arakawa
    Affiliation: Toshiba Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37087983388
    ID: 37087983388
    Order: 9
    Author Affiliations:
    • Toshiba Corporation, Kanagawa, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 660(H) x 490(V)
• dynamic_range: Not specified
• pixel_size: 5.6 µm x 5.6 µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 30 fps
• sensitivity: 240 mV (at F:5.6, 2000 lx)
• power_consumption: 60 mW
• noise: <0.1mVpp (dark FPN), <0.5% (light FPN)

Applications & Benefits

• cell_imaging: Applicable in digital imaging for smartphones, medical devices, and automotive systems.
• benefits: Reduction of column-to-column fixed pattern noise improves image quality.

Supporting Organizations

• supported_by: Toshiba Corp., Toshiba AVE Corp.

Manuscript Details

• publication_date: 9-9 Feb. 2000

Relevancy Score

• score: 10
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • use of microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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