A 3Mpixel Multiaperture Image Sensor With 07M Pixels In 011M Cmos
- doi: 10.1109/ISSCC.2008.4523050
-
title: A 3MPixel Multi-Aperture Image Sensor with 0.7μm
Pixels in 0.11μm CMOS
- publisher: IEEE
- isbn: 978-1-4244-2011-7
- issn: 2376-8606
- partnum: 08CH37986
- rank: 438
- access_type: LOCKED
- content_type: Conferences
-
abstract: Conventional image sensors have improved with
technology scaling mainly by reducing pixel size to increase spatial
resolution [1,2]. As resolution approaches the limits of existing
optics, is there much to gain from further pixel scaling? In [3], we
argue that further scaling can provide new imaging capabilities via a
multi-aperture (MA) architecture, which consists of an array of small
submicron pixel imagers (apertures), each with its own integrated
optics. By focusing the integrated optics onto an image plane formed by
an objective lens in a region above the MA imager, the apertures capture
overlapping views of the scene. The correlation and redundancy between
apertures, along with computation, provide several new capabilities,
including: (i) simultaneous capture of a 2D image at higher resolution
than the aperture count and a 3D depth map without the need for active
illumination or calibration; (ii) simplification of the objective lens
design; (iii) reduction of color crosstalk via per-aperture color
filters; and (iv) increased tolerance to pixel defects. It is further
shown that depth resolution continues to improve with pixel scaling
beyond the typical spot-size of the optics. Designing scalable arrays of
submicron pixels with acceptable imaging performance is challenging
however. In [3], we propose using a frame-transfer (FT) CCD aperture
with CMOS readout architecture. In [4], we demonstrate a 16×16, 0.5μm
pixel-pitch FT-CCD in 0.11μm CMOS technology with acceptable imaging
performance.
- article_number: 4523050
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4523050
-
html_url:
https://ieeexplore.ieee.org/document/4523050/
-
abstract_url:
https://ieeexplore.ieee.org/document/4523050/
-
publication_title: 2008 IEEE International Solid-State
Circuits Conference - Digest of Technical Papers
- conference_location: San Francisco, CA, USA
- conference_dates: 3-7 Feb. 2008
- publication_number: 4497158
- is_number: 4523032
- publication_year: 2008
- publication_date: 3-7 Feb. 2008
- start_page: 48
- end_page: 594
- citing_paper_count: 13
- citing_patent_count: 185
- download_count: 879
- insert_date: 20090109
-
index_terms:
-
ieee_terms:
- Image sensors
- Pixel
- CMOS image sensors
- Voltage
- Electrodes
- Buffer storage
- CMOS technology
- Sensor arrays
- Charge transfer
- Apertures
-
dynamic_index_terms:
- Image Sensor
- Camera Sensor
- Μm CMOS
- Electrode
- Aperture
- Decoding
- Decryption
- Objective Lens
- Objective Lenses
- Microscope Objective
- Acceptable Performance
- Imaging Capability
- CMOS Technology
- Photonic Integrated Circuits
- Integrated Optics
- Photonic Chip
- Scalable Technology
- Pixel Array
- Small Pixel
- Pixel Scale
- Regeneration Buffer
- Framebuffer
- Display Memory
- Lens Design
- Design Of Lenses
- Need For Calibration
- Readout Circuit
- Gray Code
- Grey Number
- Reset Voltage
-
isbn_formats:
-
format: CD,
value: 978-1-4244-2011-7,
isbnType: New-2005
-
format: Print ISBN,
value: 978-1-4244-2010-0,
isbnType: New-2005
-
authors:
-
Author Name: Keith Fife
Affiliation: University of Stanford, Stanford, CA,
USA
Author URL:
https://ieeexplore.ieee.org/author/37281720800
ID: 37281720800
Order: 1
Author Affiliations:
- University of Stanford, Stanford, CA, USA
-
Author Name: Abbas El Gamal
Affiliation: University of Stanford, Stanford, CA,
USA
Author URL:
https://ieeexplore.ieee.org/author/37274961200
ID: 37274961200
Order: 2
Author Affiliations:
- University of Stanford, Stanford, CA, USA
-
Author Name: H.-S. Philip Wong
Affiliation: University of Stanford, Stanford, CA,
USA
Author URL:
https://ieeexplore.ieee.org/author/37292823100
ID: 37292823100
Order: 3
Author Affiliations:
- University of Stanford, Stanford, CA, USA
Image Sensor
-
sensor_type: FT-CCD (Frame-Transfer Charge-Coupled
Device) in CMOS technology
-
resolution: 3MPixel (166 x 76 pixels of 16 x 16, 0.7 µm
pixels)
- dynamic_range: 57 dB
- pixel_size: 0.7 µm
- dark_current: 33 e-/sec at room temperature
Optical Data
- focal_length: Not specified
- aperture: f/2.4
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
- frame_rate: 15 fps (maximum frame rate with CDS)
- signal_to_noise_ratio: 2 % rms
- sensitivity: 930 e-/lux-sec at 550 nm
- power_consumption: 10.45 mW
- noise: 20 e- rms (1 mV) pixel read noise
Applications & Benefits
- cell_imaging: Not specified
-
benefits: Simultaneous capture of 2D high-resolution
images and 3D depth maps without active illumination or calibration;
improved objective lens design; reduction of color crosstalk; increased
tolerance to pixel defects.
Supporting Organizations
Manuscript Details
- publication_date: 3-7 Feb. 2008
Relevancy Score
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