A 33 5M Pitch 3Transistor Single Photon Avalanche Diode Array With Integrated 11V Bias Generation In 90Nm Cmos Technology

• doi: 10.1109/IEDM.2010.5703359
• title: A 3×3, 5µm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology
• publisher: IEEE
• isbn: 978-1-4244-7419-6
• issn: 0163-1918
• partnum: 10CH38248
• rank: 439
• access_type: LOCKED
• content_type: Conferences
• abstract: A 3×3 prototype image sensor array consisting of 2μm diameter CMOS avalanche photodiodes with 3-transistor NMOS pixel circuitry is integrated in a 90nm CMOS image sensor technology. The 5μm pixel pitch is the smallest achieved to date and is obtained with <;1% crosstalk, 250Hz mean dark count rate (DCR) at 20C, 36% photon detection efficiency at 410nm (PDE) and 107ps FWHM jitter. The small pixel pitch makes it possible to recover the 12.5% fill factor by standard wafer-level microlenses. A 5-stage capacitive charge pump generates the 11V breakdown voltage from a standard 2.5V supply obviating external high voltage generation.
• article_number: 5703359
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5703359
• html_url: https://ieeexplore.ieee.org/document/5703359/
• abstract_url: https://ieeexplore.ieee.org/document/5703359/
• publication_title: 2010 International Electron Devices Meeting
• conference_location: San Francisco, CA, USA
• conference_dates: 6-8 Dec. 2010
• publication_number: 5692854
• is_number: 5703218
• publication_year: 2010
• publication_date: 6-8 Dec. 2010
• start_page: 14.2.1
• end_page: 14.2.4
• citing_paper_count: 8
• citing_patent_count: 0
• download_count: 1029
• insert_date: 20110128
• index_terms:
  • ieee_terms:
    • Pixel
    • Arrays
    • Charge pumps
    • Photonics
    • CMOS integrated circuits
    • CMOS technology
    • Transistors
  • dynamic_index_terms:
    • Single Photon
    • Avalanche Diode
    • Single-photon Avalanche Diode
    • 90-nm CMOS
    • 90-nm CMOS Technology
    • High Voltage
    • Higher Tendency
    • Image Sensor
    • Camera Sensor
    • Fill Factor
    • Microlenses
    • Micro Lens
    • Pixel Pitch
    • Small Pitch
    • Charge Pump
    • Dark Count Rate
• isbn_formats:
  • format: Online ISBN, value: 978-1-4244-7419-6, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4424-7418-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-7420-2, isbnType: New-2005
• authors:
  • Author Name: Robert K. Henderson
    Affiliation: School of Engineering, University of Edinburgh, Edinburgh, UK
    Author URL: https://ieeexplore.ieee.org/author/37294086900
    ID: 37294086900
    Order: 1
    Author Affiliations:
    • School of Engineering, University of Edinburgh, Edinburgh, UK
  • Author Name: Eric. A. G. Webster
    Affiliation: School of Engineering, University of Edinburgh, Edinburgh, UK
    Author URL: https://ieeexplore.ieee.org/author/37599902600
    ID: 37599902600
    Order: 2
    Author Affiliations:
    • School of Engineering, University of Edinburgh, Edinburgh, UK
    • STMicroelectronics Research and Development Limited, Edinburgh, UK
  • Author Name: Richard Walker
    Affiliation: School of Engineering, University of Edinburgh, Edinburgh, UK
    Author URL: https://ieeexplore.ieee.org/author/37577235100
    ID: 37577235100
    Order: 3
    Author Affiliations:
    • School of Engineering, University of Edinburgh, Edinburgh, UK
    • STMicroelectronics Research and Development Limited, Edinburgh, UK
  • Author Name: Justin A. Richardson
    Affiliation: STMicroelectronics Research and Development Limited, Edinburgh, UK
    Author URL: https://ieeexplore.ieee.org/author/37576718300
    ID: 37576718300
    Order: 4
    Author Affiliations:
    • STMicroelectronics Research and Development Limited, Edinburgh, UK
  • Author Name: Lindsay A. Grant
    Affiliation: STMicroelectronics Research and Development Limited, Edinburgh, UK
    Author URL: https://ieeexplore.ieee.org/author/37268638300
    ID: 37268638300
    Order: 5
    Author Affiliations:
    • STMicroelectronics Research and Development Limited, Edinburgh, UK

Image Sensor

• sensor_type: CMOS
• resolution: 3x3 pixels
• dynamic_range: Not explicitly stated
• pixel_size: 5μm
• dark_current: 250Hz mean dark count rate at 20C (equivalent to ~0.007 seconds per count)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: <1% crosstalk, 250Hz dark count rate, 107ps FWHM jitter

Applications & Benefits

• cell_imaging: Applications are suitable for microscopy, astronomy, and biomedical imaging.
• benefits: Ultra-low-light imaging capability with high photon detection efficiency.

Supporting Organizations

• supported_by: The University of Edinburgh, ST Microelectronics (R&D) Ltd.

Manuscript Details

• publication_date: 6-8 Dec. 2010

Relevancy Score

• score: 10
• missing_fields:
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_18c89456-895e-4121-b127-11340172d2dc-a_33_5m_pitch_3transistor_single_photon_avalanche_diode_array_with_integrated_11v_bias_generation_in_90nm_cmos_technology.json