A 27M Pixels 64Mw Cmos Image Sensor With Multicolumnparallel Noiseshaping Sar Adcs

• doi: 10.1109/TED.2018.2795005
• title: A 2.7-M Pixels 64-mW CMOS Image Sensor With Multicolumn-Parallel Noise-Shaping SAR ADCs
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 348
• access_type: LOCKED
• content_type: Journals
• abstract: This paper presents a CMOS image sensor (CIS) utilizing a noise-shaping successive-approximation register analog-to-digital converter (SAR ADC) incorporating the delta-readout scheme. While the noise-shaping SAR ADC with a proposed two-tap passive finite-impulse response (FIR) filter improves effective resolution, the delta-readout scheme reduces its power consumption. A prototype $1920\times 1440$ pixel CIS was fabricated in a 90-nm CIS process. A single-channel readout SAR ADC occupying an area of ${22.4}\,\,\mu \textsf {m}\times {715}\,\,\mu \text{m}$ was implemented for reading out 16 columns of pixel array, consuming $437~\mu \text{W}$ . Owing to the proposed noise-shaping SAR ADC with oversampling ratio of 16, this paper achieves a noise reduction of 14 dB compared with the noise of a conventional SAR ADC. The delta-readout reduces the power consumption of the SAR ADC by 10% due to the high hit rate of the full high definition image format. The measured differential nonlinearity of the ADC is +0.77/ −0.54 LSB and the integral nonlinearity is +0.81/ −0.5 LSB. The prototype CIS consumes a total power of 64 mW and achieves a dynamic range of 66.5 dB and a figure of merit of $127~\mu \text{V}\cdot $ nJ at a data rate of 138 Mpixels/s.
• article_number: 8281441
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8281441
• html_url: https://ieeexplore.ieee.org/document/8281441/
• abstract_url: https://ieeexplore.ieee.org/document/8281441/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 8299498
• publication_year: 2018
• publication_date: March 2018
• start_page: 1119
• end_page: 1126
• citing_paper_count: 19
• citing_patent_count: 0
• download_count: 2568
• insert_date: 20180205
• index_terms:
  • ieee_terms:
    • Noise shaping
    • Finite impulse response filters
    • Quantization (signal)
    • Analog-digital conversion
    • Prototypes
    • CMOS image sensors
    • Couplings
  • author_terms:
    • CMOS image sensor (CIS)
    • delta-readout scheme
    • noise-shaping successive-approximation register analog-to-digital converter (SAR ADC)
    • oversampling
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Power Consumption
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Figure Of Merit
    • Figure-of-merit
    • Finite Impulse Response Filter
    • Pixel Array
    • Attenuation
    • Fading
    • Quantization Error
    • Amount Of Error
    • Residual Samples
    • Residues In Samples
    • Error Component
    • Noise Performance
    • Quantization Noise
    • Digital Code
    • Input Terminals
    • Delta-sigma
    • Sigma-delta
    • Delta Sigma
• authors:
  • Author Name: Sun-Il Hwang
    Affiliation: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37085387515
    ID: 37085387515
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Jae-Hyun Chung
    Affiliation: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37086057128
    ID: 37086057128
    Order: 2
    Author Affiliations:
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Hyeon-June Kim
    Affiliation: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37085397854
    ID: 37085397854
    Order: 3
    Author Affiliations:
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Il-Hoon Jang
    Affiliation: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37086010549
    ID: 37086010549
    Order: 4
    Author Affiliations:
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Min-Jae Seo
    Affiliation: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/38063173500
    ID: 38063173500
    Order: 5
    Author Affiliations:
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Sang-Hyun Cho
    Affiliation: Samsung Electronics, Hwaseong, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37281324600
    ID: 37281324600
    Order: 6
    Author Affiliations:
    • Samsung Electronics, Hwaseong, South Korea
  • Author Name: Heewon Kang
    Affiliation: Samsung Electronics, Hwaseong, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37086263241
    ID: 37086263241
    Order: 7
    Author Affiliations:
    • Samsung Electronics, Hwaseong, South Korea
  • Author Name: Minho Kwon
    Affiliation: Samsung Electronics, Hwaseong, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37270067800
    ID: 37270067800
    Order: 8
    Author Affiliations:
    • Samsung Electronics, Hwaseong, South Korea
  • Author Name: Seung-Tak Ryu
    Affiliation: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37274277300
    ID: 37274277300
    Order: 9
    Author Affiliations:
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: 1920x1440
• dynamic_range: 66.5 dB
• pixel_size: 1.4 µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 50 fps
• power_consumption: 64 mW

Applications & Benefits

• cell_imaging: Used in various devices such as smartphones and medical devices.
• benefits: High quality, low noise performance.

Supporting Organizations

• supported_by: National Research Foundation of Korea

Manuscript Details

• publication_date: March 2018

Relevancy Score

• score: 10
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

request_f5b6bd04-ca5f-4490-b26d-f86450edf462-a_27m_pixels_64mw_cmos_image_sensor_with_multicolumnparallel_noiseshaping_sar_adcs.json