A 21Mpixel 120Frames Cmos Image Sensor With Columnparallel Adc Architecture

• doi: 10.1109/ISSCC.2010.5433974
• title: A 2.1Mpixel 120frame/s CMOS image sensor with column-parallel ΔΣ ADC architecture
• publisher: IEEE
• isbn: 978-1-4244-6035-9
• issn: 0193-6530
• partnum: 10CH38207
• rank: 343
• access_type: LOCKED
• content_type: Conferences
• abstract: A 2.1 Mpixel 120 frame/s CMOS image sensor with column-parallel ΔΣ ADCs is realized in a 0.13 μm CMOS process. Column-parallel ΔΣ ADC architectures improve the conversion speed while reducing the random noise level as well. Inverter-based SC circuits maximize the power efficiency. This sensor achieves a measured noise floor of 1.9e-, while dissipating 180 mW.
• article_number: 5433974
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5433974
• html_url: https://ieeexplore.ieee.org/document/5433974/
• abstract_url: https://ieeexplore.ieee.org/document/5433974/
• publication_title: 2010 IEEE International Solid-State Circuits Conference - (ISSCC)
• conference_location: San Francisco, CA, USA
• conference_dates: 7-11 Feb. 2010
• publication_number: 5428240
• is_number: 5433812
• publication_year: 2010
• publication_date: 7-11 Feb. 2010
• start_page: 394
• end_page: 395
• citing_paper_count: 19
• citing_patent_count: 2
• download_count: 2463
• insert_date: 20100318
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Layout
    • Video compression
    • Sensor arrays
    • Lighting
    • Image sensors
    • Pulse width modulation
    • Detectors
    • Pixel
    • Circuits
  • dynamic_index_terms:
    • Power Consumption
    • Random Noise
    • Channel Noise
    • Inverter
    • High Noise Levels
    • Minimum Area
    • Consumer Market
    • High Levels Of Consumption
    • High Power Consumption
    • High-speed Imaging
    • Total Power Consumption
    • High-speed Operation
    • Advantages Of Integration
    • Pixel Pitch
    • Transistor Size
    • Transistor Count
    • Readout Circuit
    • Low-power Operation
    • Silicon Area
    • Large Pitch
    • Sense Amplifier
    • Compensation Capacitor
• isbn_formats:
  • format: CD, value: 978-1-4244-6035-9, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-6033-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-6036-6, isbnType: New-2005
• authors:
  • Author Name: Youngcheol Chae
    Affiliation: Yonsei University, Seoul, Korea
    Author URL: https://ieeexplore.ieee.org/author/37274797400
    ID: 37274797400
    Order: 1
    Author Affiliations:
    • Yonsei University, Seoul, Korea
  • Author Name: Jimin Cheon
    Affiliation: Yonsei University, Seoul, Korea
    Author URL: https://ieeexplore.ieee.org/author/37579920800
    ID: 37579920800
    Order: 2
    Author Affiliations:
    • Yonsei University, Seoul, Korea
  • Author Name: Seunghyun Lim
    Affiliation: Yonsei University, Seoul, Korea
    Author URL: https://ieeexplore.ieee.org/author/37073476100
    ID: 37073476100
    Order: 3
    Author Affiliations:
    • Yonsei University, Seoul, Korea
  • Author Name: Dongmyung Lee
    Affiliation: Yonsei University, Seoul, Korea
    Author URL: https://ieeexplore.ieee.org/author/38184394200
    ID: 38184394200
    Order: 4
    Author Affiliations:
    • Yonsei University, Seoul, Korea
  • Author Name: Minho Kwon
    Affiliation: Samsung Electronics, Yongin, Korea
    Author URL: https://ieeexplore.ieee.org/author/37270067800
    ID: 37270067800
    Order: 5
    Author Affiliations:
    • Samsung Electronics, Yongin, Korea
  • Author Name: Kwisung Yoo
    Affiliation: Samsung Electronics, Yongin, Korea
    Author URL: https://ieeexplore.ieee.org/author/37271464200
    ID: 37271464200
    Order: 6
    Author Affiliations:
    • Samsung Electronics, Yongin, Korea
  • Author Name: Wunki Jung
    Affiliation: Samsung Electronics, Yongin, Korea
    Author URL: https://ieeexplore.ieee.org/author/37588777900
    ID: 37588777900
    Order: 7
    Author Affiliations:
    • Samsung Electronics, Yongin, Korea
  • Author Name: Dong-Hun Lee
    Affiliation: Samsung Electronics, Yongin, Korea
    Author URL: https://ieeexplore.ieee.org/author/37292969900
    ID: 37292969900
    Order: 8
    Author Affiliations:
    • Samsung Electronics, Yongin, Korea
  • Author Name: Seogheon Ham
    Affiliation: Samsung Electronics, Yongin, Korea
    Author URL: https://ieeexplore.ieee.org/author/37375894700
    ID: 37375894700
    Order: 9
    Author Affiliations:
    • Samsung Electronics, Yongin, Korea
  • Author Name: Gunhee Han
    Affiliation: Yonsei University, Seoul, Korea
    Author URL: https://ieeexplore.ieee.org/author/37270066200
    ID: 37270066200
    Order: 10
    Author Affiliations:
    • Yonsei University, Seoul, Korea

Image Sensor

• sensor_type: CMOS
• resolution: 2.1Mpixel (1696x1212)
• dynamic_range: Not specified
• pixel_size: 2.25µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 120fps
• power_consumption: 180mW
• noise: 1.9e-rms

Applications & Benefits

• cell_imaging: Not specified
• benefits: The CMOS image sensor achieves lower power consumption and reduced noise levels compared to traditional methods.

Supporting Organizations

• supported_by: Samsung Electronics

Manuscript Details

• publication_date: 7-11 Feb. 2010

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

request_21d18505-9b45-4ecd-9540-6d4ffce892fc-a_21mpixel_120frames_cmos_image_sensor_with_columnparallel__adc_architecture.json