A 200Muve Cmos Image Sensor With 100Ke Full Well Capacity

• doi: 10.1109/JSSC.2008.917549
• title: A 200-$\mu$V/e$^{-}$ CMOS Image Sensor With 100-ke$^{-}$ Full Well Capacity
• publisher: IEEE
• isbn:
• issn: 1558-173X
• rank: 354
• access_type: LOCKED
• content_type: Journals
• abstract: A high-sensitivity CMOS image sensor keeping a high full-well capacity has been developed by introducing a new pixel having a small floating diffusion (FD) capacitance connected to a lateral overflow integration capacitor (LOFIC) through a MOS switch. The conceptual advantage of the small FD approach over conventional column amplifier approaches is compared and demonstrated. To ensure both the high sensitivity and the high full-well capacity, the low-light and the bright-light signals (S1 and S2) are output and reproduced without a visible SNR degradation at the S1/S2 switching point. As the most critical problem, the increase of the conversion gain variation in this approach is suppressed by applying a self-aligned offset structure to the small FD. A 1/4-in VGA format CMOS image sensor fabricated through 0.18-mum 2P3M process achieves 2.2-e- rms noise floor with 200-muV/e- conversion gain and 100-ke- full-well capacity.
• article_number: 4476476
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4476476
• html_url: https://ieeexplore.ieee.org/document/4476476/
• abstract_url: https://ieeexplore.ieee.org/document/4476476/
• publication_title: IEEE Journal of Solid-State Circuits
• conference_location:
• conference_dates:
• publication_number: 4
• is_number: 4476475
• publication_year: 2008
• publication_date: April 2008
• start_page: 823
• end_page: 830
• citing_paper_count: 25
• citing_patent_count: 4
• download_count: 1402
• insert_date: 20080331
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Switches
    • Image converters
    • Semiconductor device noise
    • Pixel
    • Circuit noise
    • Parasitic capacitance
    • Dynamic range
    • Noise reduction
    • Low-noise amplifiers
  • author_terms:
    • CMOS image sensor
    • dynamic range
    • semiconductor device noise
    • sensitivity
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Noise Floor
    • Switching Point
    • Conversion Gain
    • Visible Degradation
    • High-sensitivity Sensor
    • Solid Line
    • Horizontal Line
    • Photoelectron
    • Photoelectric
    • Denoising
    • Noise Reduction
    • Recent Paper
    • Sample Holder
    • High Gain
    • Quantum Efficiency
    • Variation In Sensitivity
    • Thermal Noise
    • Current Noise
    • Noise Components
    • Theoretical Curves
    • Small Capacity
    • Small Capacitance
    • Number Of Charges
    • P-n Junction
    • Input-referred Noise
    • Readout Circuit
    • CMOS Process
    • Junction Capacitance
    • Voltage Noise
    • Noise Performance
    • Linear Response
    • Sensor Characteristics
    • Sensor Features
• authors:
  • Author Name: Satoru Adachi
    Affiliation: Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37302012300
    ID: 37302012300
    Order: 1
    Author Affiliations:
    • Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: Woonghee Lee
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37404271200
    ID: 37404271200
    Order: 2
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan
  • Author Name: Nana Akahane
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37296244800
    ID: 37296244800
    Order: 3
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan
  • Author Name: Hiromichi Oshikubo
    Affiliation: Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37705855700
    ID: 37705855700
    Order: 4
    Author Affiliations:
    • Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: Koichi Mizobuchi
    Affiliation: Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37296247800
    ID: 37296247800
    Order: 5
    Author Affiliations:
    • Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: Shigetoshi Sugawa
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37284703100
    ID: 37284703100
    Order: 6
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan

Image Sensor

• sensor_type: CMOS
• resolution: VGA format (640x480)
• dynamic_range: 93 dB
• pixel_size: 5.6 µm x 5.6 µm
• dark_current: Not specified in e-/s.

Optical Data

• focal_length: Not specified in mm.
• aperture: Not specified as f-number.
• field_of_view: Not specified in degrees (°).
• distortion: Not specified as a percentage (%).

Performance Metrics

• frame_rate: Not specified in fps.
• signal_to_noise_ratio: Greater than 40 dB (at high sensitivity)
• sensitivity: Not specified in ISO units.
• shutter_speed: Not specified in seconds (s).
• power_consumption: Not specified in milliwatts (mW).
• noise: 2.2 e- (RMS noise)

Applications & Benefits

• cell_imaging: High-sensitivity CMOS image sensor enhancing dynamic range suitable for various imaging applications.
• benefits: Increased dynamic range and reduced noise without visible SNR degradation at S1/S2 switching point.

Supporting Organizations

• supported_by: Texas Instruments Japan, Tohoku University

Manuscript Details

• publication_date: April 2008

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_27488860-db40-4d27-b966-618d86c438ef-a_200muve_cmos_image_sensor_with_100ke_full_well_capacity.json