A 200 X 256 Image Sensor Heterogeneously Integrating A 2D Nanomaterialbased Photofet Array And Cmos Timetodigital Converters

• doi: 10.1109/ISSCC42614.2022.9731685
• title: A 200 x 256 Image Sensor Heterogeneously Integrating a 2D Nanomaterial-Based Photo-FET Array and CMOS Time-to-Digital Converters
• publisher: IEEE
• isbn: 978-1-6654-2801-9
• issn: 0193-6530
• rank: 353
• access_type: LOCKED
• content_type: Conferences
• abstract: The CMOS image sensor, which incorporates a silicon photodiode array and a signal processor on a chip, or in a multi-die stack, has become an indispensable part of our daily lives. While its dominance in digital image capture will foreseeably continue, research with future outlooks is actively searching for new optoelectronic devices, alternative to silicon photodiodes, to place on the CMOS signal processor. Two-dimensional (2D) semiconducting materials, in particular, atomically thin transition metal dichalcogenide (TMD) monolayers-which are one of the most actively researched solid-state materials-are especially promising candidates for these applications [1], [2]. The vision arises from the fact that TMD monolayer crystals of different chemical compositions exhibit different bandgaps, or different absorption wavelengths from infrared to visible, and that these atom-thick crystals with differing bandgaps can, in principle, be van der Waals stacked to produce diverse spectral sensitivities beyond what is possible with conventional CMOS image sensors. Despite this vision, however, TMD arrays, such as those made from $\text{MoS}_{2}$ optoelectronic devices (photo-FETs), have been limited to 32 x 32 thus far [3], and have not been integrated on CMOS signal processing chips; graphene was integrated with CMOS electronics, but this semimetal uses additional layers, such as quantum dots, for light absorption [4].
• article_number: 9731685
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9731685
• html_url: https://ieeexplore.ieee.org/document/9731685/
• abstract_url: https://ieeexplore.ieee.org/document/9731685/
• publication_title: 2022 IEEE International Solid-State Circuits Conference (ISSCC)
• conference_location: San Francisco, CA, USA
• conference_dates: 20-26 Feb. 2022
• publication_number: 9731529
• is_number: 9731102
• publication_year: 2022
• publication_date: 20-26 Feb. 2022
• start_page: 1
• end_page: 3
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 1216
• insert_date: 20220317
• index_terms:
  • ieee_terms:
    • Array signal processing
    • Photonic band gap
    • Absorption
    • Atomic layer deposition
    • Crystals
    • CMOS image sensors
    • Optoelectronic devices
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Time-to-digital Converter
    • Signal Processing
    • Graphene
    • Pulse Width
    • Pulsewidth Modulation
    • Pulsewidth
    • Pulse Width Modulation
    • 2D Materials
    • Antimony
    • Absorption Wavelength
    • Absorption Wavelengths
    • Optoelectronic Devices
    • Transition Metal Dichalcogenides
    • Metal Dichalcogenides
    • Transition-metal Dichalcogenides
    • Pixel Level
    • Parasitic Capacitance
    • Semimetal
    • Drain Current
    • Phototransistor
    • Readout Circuit
    • Fixed Time Window
    • Fixed-time Window
    • Digital Capture
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-6654-2801-9, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-6654-2800-2, isbnType: New-2005
• authors:
  • Author Name: Henry Hinton
    Affiliation: Harvard University, Cambridge, MA
    Author URL: https://ieeexplore.ieee.org/author/37089336947
    ID: 37089336947
    Order: 1
    Author Affiliations:
    • Harvard University, Cambridge, MA
  • Author Name: Houk Jang
    Affiliation: Harvard University, Cambridge, MA
    Author URL: https://ieeexplore.ieee.org/author/37089337586
    ID: 37089337586
    Order: 2
    Author Affiliations:
    • Harvard University, Cambridge, MA
  • Author Name: Wenxuan Wu
    Affiliation: Harvard University, Cambridge, MA
    Author URL: https://ieeexplore.ieee.org/author/37088473365
    ID: 37088473365
    Order: 3
    Author Affiliations:
    • Harvard University, Cambridge, MA
  • Author Name: Min-Hyun Lee
    Affiliation: Samsung Advanced Institute of Technology, Suwon, Korea
    Author URL: https://ieeexplore.ieee.org/author/37089336405
    ID: 37089336405
    Order: 4
    Author Affiliations:
    • Samsung Advanced Institute of Technology, Suwon, Korea
  • Author Name: Minsu Seol
    Affiliation: Samsung Advanced Institute of Technology, Suwon, Korea
    Author URL: https://ieeexplore.ieee.org/author/37089337813
    ID: 37089337813
    Order: 5
    Author Affiliations:
    • Samsung Advanced Institute of Technology, Suwon, Korea
  • Author Name: Hyeon-Jin Shin
    Affiliation: Samsung Advanced Institute of Technology, Suwon, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088696368
    ID: 37088696368
    Order: 6
    Author Affiliations:
    • Samsung Advanced Institute of Technology, Suwon, Korea
  • Author Name: Seongjun Park
    Affiliation: Samsung Advanced Institute of Technology, Suwon, Korea
    Author URL: https://ieeexplore.ieee.org/author/37089336351
    ID: 37089336351
    Order: 7
    Author Affiliations:
    • Samsung Advanced Institute of Technology, Suwon, Korea
  • Author Name: Donhee Ham
    Affiliation: Harvard University, Cambridge, MA
    Author URL: https://ieeexplore.ieee.org/author/37283858900
    ID: 37283858900
    Order: 8
    Author Affiliations:
    • Harvard University, Cambridge, MA

Image Sensor

• sensor_type: CMOS
• resolution: 256x200
• dynamic_range: 122.5dB
• pixel_size: 30µm x 30µm
• dark_current: 670fA

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: The sensor can be used in various imaging applications, including cell imaging, due to its sensitivity and resolution.
• benefits: Benefits include increased integration scale, on-chip digitization, and the ability to capture diverse spectral sensitivities.

Supporting Organizations

• supported_by: Samsung Advanced Institute of Technology, NSF CIQM, Harvard CNS

Manuscript Details

• publication_date: 20-26 Feb. 2022

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_3774b4c4-48d3-4924-b240-ebe83b8fe558-a_200_x_256_image_sensor_heterogeneously_integrating_a_2d_nanomaterialbased_photofet_array_and_cmos_timetodigital_converters.json