A 19 E Random Noise Cmos Image Sensor With Active Feedback Operation In Each Pixel

• doi: 10.1109/TED.2009.2030644
• title: A 1.9 $e^{-}$ Random Noise CMOS Image Sensor With Active Feedback Operation in Each Pixel
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 222
• access_type: LOCKED
• content_type: Journals
• abstract: A 1.9 e- random noise CMOS image sensor has been developed by applying an active feedback operation (AFO), which uses a capacitive feedback effect to floating diffusion (FD) by a gate-source capacitance of a pixel source follower (SF), in a CMOS image sensor with a lateral overflow integration capacitor (LOFIC) technology. It is described that the AFO is suitable for CMOS image sensors with LOFIC because the design of the full well capacity and the FD can be independently optimized. The AFO theory is found to be explored to a large signal voltage in detail, as well as the conventional analysis of the capacitive feedback effect of the pixel SF for a small signal voltage. A 1/4-in 5.6- mum-pitch 640(H) times 480(V) pixel sensor chip in a 0.18-mum two-poly-Si three-metal CMOS technology achieves about 1.7 times the sensitivity with AFO compared with the case where the feedback operation is not positively used, resulting in an input-referred conversion gain of 210 muV/e- and an input-referred noise of 1.9 e-. A high well capacity of 130 000 e- is also achieved.
• article_number: 5280321
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5280321
• html_url: https://ieeexplore.ieee.org/document/5280321/
• abstract_url: https://ieeexplore.ieee.org/document/5280321/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 5290333
• publication_year: 2009
• publication_date: Nov. 2009
• start_page: 2436
• end_page: 2445
• citing_paper_count: 5
• citing_patent_count: 0
• download_count: 941
• insert_date: 20091006
• index_terms:
  • ieee_terms:
    • Pixel
    • Switches
    • Computational fluid dynamics
    • CMOS image sensors
    • Switching circuits
    • Signal to noise ratio
  • author_terms:
    • CMOS image sensor
    • full well capacity (FWC)
    • low noise
    • signal-to-noise ratio (SNR)
  • dynamic_index_terms:
    • Random Noise
    • Channel Noise
    • Image Sensor
    • Camera Sensor
    • Random Images
    • Feedback Operation
    • Feedback Effects
    • Effective Capacity
    • Effective Capacitance
    • Voltage Signal
    • Sensor Chip
    • Input-referred Noise
    • Digital Camera
    • Operation Time
    • Line In Fig
    • Normal Operation
    • High Gain
    • Noise Sources
    • Change Curve
    • High Signal-to-noise Ratio
    • Shot Noise
    • Poisson Noise
    • Parasitic Capacitance
    • Dark Current
    • Relative Gain
    • Pixel Pitch
    • Mobile Camera
    • Mobile Phone Camera
    • Cell Phone Camera
    • Flicker Noise
    • Low-light Image
    • Open Squares
    • Dark Noise
    • PIN Photodiode
• authors:
  • Author Name: Woonghee Lee
    Affiliation: Sugawa Laboratory, Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37404271200
    ID: 37404271200
    Order: 1
    Author Affiliations:
    • Sugawa Laboratory, Graduate School of Engineering, University of Tohoku, Sendai, Japan
  • Author Name: Nana Akahane
    Affiliation: Sugawa Laboratory, Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37296244800
    ID: 37296244800
    Order: 2
    Author Affiliations:
    • Sugawa Laboratory, Graduate School of Engineering, University of Tohoku, Sendai, Japan
  • Author Name: Satoru Adachi
    Affiliation: Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37302012300
    ID: 37302012300
    Order: 3
    Author Affiliations:
    • Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: Koichi Mizobuchi
    Affiliation: Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37296247800
    ID: 37296247800
    Order: 4
    Author Affiliations:
    • Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: Shigetoshi Sugawa
    Affiliation: Sugawa Laboratory, Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37284703100
    ID: 37284703100
    Order: 5
    Author Affiliations:
    • Sugawa Laboratory, Graduate School of Engineering, University of Tohoku, Sendai, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 640(H) x 480(V)
• dynamic_range: 97 dB
• pixel_size: 5.6 μm
• dark_current: 11 e-/pixel (0.35 e-/s/μm²)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• sensitivity: 210 μV/e-
• noise: 1.9 e-

Applications & Benefits

• cell_imaging: CMOS image sensors are used in mobile-phone cameras and digital still cameras, particularly for low-light imaging and high sensitivity applications.
• benefits: Improved readout gain and reduced noise, enhancing image quality.

Supporting Organizations

• supported_by: Texas Instruments Japan Ltd., Tohoku University

Manuscript Details

• publication_date: Nov. 2009

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_27844539-1dba-478e-81df-6289c5f99bed-a_19_e_random_noise_cmos_image_sensor_with_active_feedback_operation_in_each_pixel.json