A 1500 Fps Highly Sensitive 256 Times256 Cmos Imaging Sensor With Inpixel Calibration

• doi: 10.1109/JSSC.2012.2192662
• title: A 1500 fps Highly Sensitive 256 $\,\times\,$256 CMOS Imaging Sensor With In-Pixel Calibration
• publisher: IEEE
• isbn:
• issn: 1558-173X
• rank: 312
• access_type: LOCKED
• content_type: Journals
• abstract: High-speed CMOS imaging sensors (CIS) normally have low sensitivity because of the large integration capacitance. They also have high noise because pixel circuits cannot implement correlated double sampling (CDS) to remove the pixel reset noise. For applications, such as micro-computed tomography (micro-CT), this is a major limitation. In this work, we developed a technique to achieve high sensitivity and low noise for high-speed CIS. To maximize the sensitivity, we designed a new capacitive transimpedance amplifier (CTIA) pixel with a tiny metal-oxide-metal capacitor. The pixel circuit also implements CDS. As a result, the temporal noise is greatly reduced, and the sensitivity improves dramatically. To compensate the mismatch of small integration capacitors across the pixel array, an on-chip calibration scheme with in-pixel circuits is developed. Fully differential column circuits are designed to suppress the power supply injection in the large array of high-speed column circuits. A successive-approximation analog-to-digital (SAR ADC) is designed to achieve 10-bit resolution and to fit in the 15-μm column pitch. For testing modes, column circuits are configured into a two-step ADC to provide 13-bit dynamic range. The 256 × 256 CIS design is fabricated in a 0.18-μm CMOS process. The imager samples up to 1500 fps. The pixel integration capacitor is 0.7 fF, which enables 68.5 V/lux · s sensitivity under the white illumination. The CIS temporal noise is 13.6e-. This sensitivity and noise performances are much better than previous high-speed CIS benchmark designs. Running at 1500 fps, the CIS can capture recognizable images with illumination down to 1 lux. The on-chip calibration suppresses the fixed-pattern noise lower than 0.52%. The prototype chip consumes 390 mW of power.
• article_number: 6200001
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6200001
• html_url: https://ieeexplore.ieee.org/document/6200001/
• abstract_url: https://ieeexplore.ieee.org/document/6200001/
• publication_title: IEEE Journal of Solid-State Circuits
• conference_location:
• conference_dates:
• publication_number: 4
• is_number: 6203507
• publication_year: 2012
• publication_date: June 2012
• start_page: 1408
• end_page: 1418
• citing_paper_count: 48
• citing_patent_count: 4
• download_count: 3938
• insert_date: 20120514
• index_terms:
  • ieee_terms:
    • Noise
    • Calibration
    • Capacitors
    • Photodiodes
    • Imaging
    • Sensitivity
    • Switches
  • author_terms:
    • Capacitive transimpedance amplifier (CTIA)
    • CMOS imaging sensor (CIS)
    • column successive-approximation analog-to-digital converter (SAR ADC)
    • high-sensitivity
    • high-speed imaging
    • in-pixel calibration
    • micro-computed tomography (micro-CT)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Dynamic Range
    • High Noise
    • Low Noise
    • Testing Modalities
    • Small Capacity
    • Small Capacitance
    • High-speed Imaging
    • CMOS Process
    • Pixel Array
    • White Illumination
    • Temporal Noise
    • Photodiode
    • White Light
    • Photocurrent
    • Fill Factor
    • Dark Current
    • Most Significant Bit
    • High Bit
    • Highest Bit
    • Illumination Levels
    • Timing Diagram
    • Noise Bands
    • Real Mode
    • Voltage Noise
    • micro-CT System
    • Misprediction
    • Branch Prediction
    • Sensor Pixel
• authors:
  • Author Name: Ruoyu Xu
    Affiliation: Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37587351700
    ID: 37587351700
    Order: 1
    Author Affiliations:
    • Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
  • Author Name: Bing Liu
    Affiliation: Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37577861500
    ID: 37577861500
    Order: 2
    Author Affiliations:
    • Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
  • Author Name: Jie Yuan
    Affiliation: Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37281353000
    ID: 37281353000
    Order: 3
    Author Affiliations:
    • Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China

Image Sensor

• sensor_type: CMOS
• resolution: 256x256
• dynamic_range: 56.5 dB
• pixel_size: 15 um
• dark_current: 1 fA

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 1500 fps
• signal_to_noise_ratio: Not explicitly specified
• sensitivity: 68.5 V/lux s
• power_consumption: 390 mW
• noise: 0.5 m

Applications & Benefits

• cell_imaging: High-speed imaging applications such as micro-computed tomography (micro-CT) and fast-moving object capture.
• benefits: Increased sensitivity and reduced noise enabling effective imaging at low illumination (down to 1 lux).

Supporting Organizations

• supported_by: Hong Kong Government ITC and Huawei Technologies Ltd.

Manuscript Details

• publication_date: June 2012

Relevancy Score

• score: 10

Processed JSON Filename

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