A 14Bit 150Kss Sar Adc With Pga For Cmos Image Sensor

• doi: 10.1109/ISSPIT47144.2019.9001750
• title: A 14-bit 150KS/s SAR ADC with PGA for CMOS Image Sensor
• publisher: IEEE
• isbn: 978-1-7281-5342-1
• issn: 2162-7843
• rank: 306
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper introduces a 14-bit 150KS/s successive approximation register (SAR) analog-to-digital converter (ADC) with programmable gain amplifier (PGA) used in CMOS Image Sensor (CIS), which doesn't adopt calibration module as well. The pixel size is 12.5 um × 12.5 um and the pixel array of mentioned CIS is 1026 × 1024. In order to realize the goal of converting more pixel signal, three-way PGA works at the same time to sample three columns of pixel signal and then sends the amplified signal into SAR ADC step by step. What's more, multiple reference voltages and complementary capacitor array are used to reduce the capacitor number and improve resolution, accepting 4.8 Vpp differential input signal. The prototype circuit is fabricated in 180 nm 3.3-V CMOS process. The total area of chip is 26.25 × 18.38 mm2. At a 3.3-V supply and 150 KS/s sampling rate, the ADC with PGA achieves SNR of 71.72 dB and SFDR of 82.91 dB while the single ADC consumes 477.2 uW.
• article_number: 9001750
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9001750
• html_url: https://ieeexplore.ieee.org/document/9001750/
• abstract_url: https://ieeexplore.ieee.org/document/9001750/
• publication_title: 2019 IEEE International Symposium on Signal Processing and Information Technology (ISSPIT)
• conference_location: Ajman, United Arab Emirates
• conference_dates: 10-12 Dec. 2019
• publication_number: 8979200
• is_number: 9001729
• publication_year: 2019
• publication_date: 10-12 Dec. 2019
• start_page: 1
• end_page: 5
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 1193
• insert_date: 20200220
• index_terms:
  • ieee_terms:
    • Electronics packaging
    • Capacitors
    • Switches
    • Signal resolution
    • Timing
    • CMOS image sensors
    • Registers
  • author_terms:
    • CIS
    • Pixel Array
    • PGA
    • SAR ADC
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Pixel Size
    • Input Signal
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • CMOS Process
    • Pixel Array
    • Multiple Arrays
    • Multiple Voltage
    • Positive Side
    • Total Charge
    • Negative Side
    • Capacity Of Samples
    • Reference Source
    • Lower Plate
    • Upper Plate
    • Positive Axis
    • Work Cycle
    • Part Of The Circuit
    • Negative Axis
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-7281-5342-1, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-7281-5341-4, isbnType: New-2005
• authors:
  • Author Name: Xiaowei Zhang
    Affiliation: Institute of VLSI Design, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37089265975
    ID: 37089265975
    Order: 1
    Author Affiliations:
    • Institute of VLSI Design, Zhejiang University, Hangzhou, China
  • Author Name: Wei Fan
    Affiliation: Institute of VLSI Design, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37086391152
    ID: 37086391152
    Order: 2
    Author Affiliations:
    • Institute of VLSI Design, Zhejiang University, Hangzhou, China
  • Author Name: Jianxiong Xi
    Affiliation: Institute of VLSI Design, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37085552263
    ID: 37085552263
    Order: 3
    Author Affiliations:
    • Institute of VLSI Design, Zhejiang University, Hangzhou, China
  • Author Name: Lenian He
    Affiliation: Institute of VLSI Design, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37395564700
    ID: 37395564700
    Order: 4
    Author Affiliations:
    • Institute of VLSI Design, Zhejiang University, Hangzhou, China

Image Sensor

• sensor_type: CMOS
• resolution: 1026x1024 pixels
• dynamic_range: Not specified
• pixel_size: 12.5 um × 12.5 um
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 50 fps
• signal_to_noise_ratio: 71.72 dB
• power_consumption: 477.2 uW

Applications & Benefits

• cell_imaging: Used in CMOS Image Sensors for capturing images
• benefits: High resolution, low noise, high speed readout

Supporting Organizations

• supported_by: Institute of VLSI Design, Zhejiang University, Hangzhou, China

Manuscript Details

• publication_date: 10-12 Dec. 2019

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • temporal noise
  • fixed-pattern noise
  • readout speed
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

request_1ecb5c72-0c8a-46db-98d2-3b7cd9e0cd2c-a_14bit_150kss_sar_adc_with_pga_for_cmos_image_sensor.json