A 128Stage Analog Accumulator For Cmos Tdi Image Sensor

• doi: 10.1109/TCSI.2014.2304663
• title: A 128-Stage Analog Accumulator for CMOS TDI Image Sensor
• publisher: IEEE
• isbn:
• issn: 1558-0806
• rank: 286
• access_type: LOCKED
• content_type: Journals
• abstract: The impacts of parasitic phenomenon on the performance of the analog accumulator in CMOS TDI image sensor are analyzed in this paper, and a modified accumulator with decoupling capacitor Cd to combat the parasitic phenomenon is also proposed. A 128-stage modified accumulator is designed and simulated. A prototype 1024 × 128 CMOS TDI image sensor with the 128-stage modified accumulator is fabricated in 0.18- μm one-poly four-metal 1.8 V/3.3 V CMOS technology. With a line rate of 3875 lines/s, at 128 stages the measured sensitivity and SNR improvement of the fabricated sensor are 617.1 V/lux·s and 16.6 dB respectively. The simulation and experiment results have proved the effectiveness of the decoupling capacitor Cd when combating the parasitic phenomenon in the analog accumulator. The proposed modified accumulator is suitable for application in CMOS TDI image sensor with high stages.
• article_number: 6742633
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6742633
• html_url: https://ieeexplore.ieee.org/document/6742633/
• abstract_url: https://ieeexplore.ieee.org/document/6742633/
• publication_title: IEEE Transactions on Circuits and Systems I: Regular Papers
• conference_location:
• conference_dates:
• publication_number: 8919
• is_number: 6842725
• publication_year: 2014
• publication_date: July 2014
• start_page: 1952
• end_page: 1961
• citing_paper_count: 32
• citing_patent_count: 0
• download_count: 1422
• insert_date: 20140217
• index_terms:
  • ieee_terms:
    • Capacitors
    • CMOS integrated circuits
    • Image sensors
    • Layout
    • CMOS technology
    • Signal to noise ratio
  • author_terms:
    • Analog accumulator
    • CMOS image sensor
    • signal-to-noise ratio (SNR)
    • time delay integration (TDI)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Time Delay Integration
    • Simulation Results
    • Improvement In Sensitivity
    • CMOS Technology
    • CCD Camera
    • Charge-coupled Device
    • Sensitivity Of The Sensor
    • Thermal Noise
    • Current Noise
    • Parasitic Capacitance
    • Operational Amplifier
    • Op-amp
    • Equivalent Capacitance
    • Differential Output
    • Differential Yield
    • Common-mode Voltage
    • Charge Conservation
    • Readout Circuit
    • Parasitic Parameters
    • Electronic Design Automation
    • ECAD
    • EDA Tools
• authors:
  • Author Name: Kaiming Nie
    Affiliation: School of Electronic Information Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37085670429
    ID: 37085670429
    Order: 1
    Author Affiliations:
    • School of Electronic Information Engineering, Tianjin University, Tianjin, China
  • Author Name: Suying Yao
    Affiliation: School of Electronic Information Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37402574300
    ID: 37402574300
    Order: 2
    Author Affiliations:
    • School of Electronic Information Engineering, Tianjin University, Tianjin, China
  • Author Name: Jiangtao Xu
    Affiliation: School of Electronic Information Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37577831800
    ID: 37577831800
    Order: 3
    Author Affiliations:
    • School of Electronic Information Engineering, Tianjin University, Tianjin, China
  • Author Name: Jing Gao
    Affiliation: School of Electronic Information Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/38239776100
    ID: 38239776100
    Order: 4
    Author Affiliations:
    • School of Electronic Information Engineering, Tianjin University, Tianjin, China
  • Author Name: Yu Xia
    Affiliation: School of Electronic Information Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37085669203
    ID: 37085669203
    Order: 5
    Author Affiliations:
    • School of Electronic Information Engineering, Tianjin University, Tianjin, China

Image Sensor

• sensor_type: CMOS TDI image sensor
• resolution: 1024x128
• dynamic_range: Not specified
• pixel_size: 15 µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 3875 lines/s
• signal_to_noise_ratio: 16.6 dB
• sensitivity: 617.1 V/lux•s
• power_consumption: 0.32 mW

Applications & Benefits

• cell_imaging: Used in applications requiring low noise imaging under low illumination conditions, such as remote sensing, medical imaging and industrial inspections.
• benefits: Low power consumption, high sensitivity, and integration of analog circuitry with the sensor.

Supporting Organizations

• supported_by: National Natural Science Foundation of China, Tianjin Municipal Science and Technology Project

Manuscript Details

• publication_date: July 2014

Relevancy Score

• score: 10
• missing_fields:
  • quantum_efficiency
  • readout_speed
  • noise_sources
  • analog_to_digital_conversion_techniques
  • microlenses
  • on_chip_colour_filters
  • global_or_rolling_shutters
  • backside_illumination

Processed JSON Filename

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