A 128Spl Times128pixel Standardcmos Image Sensor With Electronic Shutter
- doi: 10.1109/4.545814
-
title: A 128/spl times/128-pixel standard-CMOS image
sensor with electronic shutter
- publisher: IEEE
- isbn:
- issn: 1558-173X
- rank: 292
- access_type: LOCKED
- content_type: Journals
-
abstract: A 128/spl times/128-pixel image sensor with a
20 s-10/sup -4/ s electronic shutter has been integrated in a 1.2-/spl
mu/m digital CMOS technology. The pixel cell consists of four PMOS
transistors and a photodiode with antiblooming suppression. Each pixel
measures 24 /spl mu/m by 24 /spl mu/m and has a fill factor of 25%.
Current is used to transfer pixel signals to the column readout
amplifiers in order to minimize voltage swings on the highly capacitive
column lines. Correlated double sampling is used to reduce intracolumn
fixed pattern noise. The saturation voltage is 470 mV. The peak output
signal to noise ratio is 45 dB, and the optical dynamic range is 56 dB.
The frame transfer rate is 1.7 ms per frame.
- article_number: 545814
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=545814
-
html_url:
https://ieeexplore.ieee.org/document/545814/
-
abstract_url:
https://ieeexplore.ieee.org/document/545814/
-
publication_title: IEEE Journal of Solid-State Circuits
- conference_location:
- conference_dates:
- publication_number: 4
- is_number: 11951
- publication_year: 1996
- publication_date: Dec. 1996
- start_page: 1922
- end_page: 1930
- citing_paper_count: 35
- citing_patent_count: 27
- download_count: 536
- insert_date: 20020806
-
index_terms:
-
ieee_terms:
- Image sensors
- CMOS technology
- Voltage
- Optical noise
- CMOS image sensors
- MOSFETs
- Photodiodes
- Optical amplifiers
- Sampling methods
- Noise reduction
-
dynamic_index_terms:
- Dynamic Range
- Output Signal
- Image Sensor
- Camera Sensor
- Peak Output
- Peak Yield
- CMOS Technology
- Optical Range
- Double Sampling
- Saturation Voltage
- CCD Camera
- Charge-coupled Device
- Photocurrent
- Bias Voltage
- Transconductance
- Conductive Transfer
- Parasitic Capacitance
- Light Bulb
- Dark Current
- Charge Injection
- Saturation Region
- Entire Array
- Shutter Speed
- Adaptive Bias
- External Clock
- Output Buffer
- Shift Register
- Analog Output
- Strong Inversion
- Bus Power
- Standard CMOS
- Lens Aperture
- Aperture Lenses
- High Voltage
- Higher Tendency
-
authors:
-
Author Name: Chye Huat Aw
Affiliation: Center for Integrated Systems,
University of Stanford, Stanford, CA, USA
Author URL:
https://ieeexplore.ieee.org/author/37087456618
ID: 37087456618
Order: 1
Author Affiliations:
-
Center for Integrated Systems, University of Stanford, Stanford,
CA, USA
-
Author Name: B.A. Wooley
Affiliation: Center for Integrated Systems,
University of Stanford, Stanford, CA, USA
Author URL:
https://ieeexplore.ieee.org/author/37275768700
ID: 37275768700
Order: 2
Author Affiliations:
-
Center for Integrated Systems, University of Stanford, Stanford,
CA, USA
Image Sensor
- sensor_type: CMOS
- resolution: 128x128
- dynamic_range: 56 dB
- pixel_size: 24 pm x 24 pm
-
dark_current: 10 mV/s (without dark current reference
subtraction)
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
-
frame_rate: 1.7 ms per frame (approximately 588 fps)
- signal_to_noise_ratio: 45 dB
- shutter_speed: 20 s - 10^-4 s
- power_consumption: 100 mW during frame transfer
- noise: 2.6 mV RMS random noise in the dark
Applications & Benefits
-
cell_imaging: Prototype for still-image digital
photography applications
-
benefits: Integration with standard digital CMOS
technology, wide range of exposure times, low fixed pattern noise,
antiblooming, low smear, and fast readout speed.
Supporting Organizations
- supported_by: Stanford University, MOSIS
Manuscript Details
- publication_date: Dec. 1996
Relevancy Score
Processed JSON Filename
request_2699f4ea-b457-485c-b739-4a228bd48fe3-a_128spl_times128pixel_standardcmos_image_sensor_with_electronic_shutter.json