A 127In 296 Mpixel Cmos Image Sensor With Double Cds Architecture For Full Highdefinition Camcorders

• doi: 10.1109/JSSC.2007.908719
• title: A 1/2.7-in 2.96 MPixel CMOS Image Sensor With Double CDS Architecture for Full High-Definition Camcorders
• publisher: IEEE
• isbn:
• issn: 1558-173X
• rank: 235
• access_type: LOCKED
• content_type: Journals
• abstract: A 1/2.7-in 1944 times 1484 pixel CMOS image sensor with double CDS architecture fabricated in a 0.18-mum single-poly triple-metal (1P3M) CMOS process is described. It operates at 48 MHz in a progressive scanning mode at 60 frames/s for full high-definition (HD) imaging. Two transistors/pixel architecture and low optical stack with double microlenses achieve 14.6 ke macr/1times ldr s sensitivity and 14 ke macr saturation. Double CDS architecture with a high-gain column amplifier realized a low noise floor of 3.5 e macrrms. Optimized shallow-trench isolation achieved very low dark current of 12.2 e macr/s (60degC). This image sensor also realizes low power consumption of 220 mW.
• article_number: 4381466
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4381466
• html_url: https://ieeexplore.ieee.org/document/4381466/
• abstract_url: https://ieeexplore.ieee.org/document/4381466/
• publication_title: IEEE Journal of Solid-State Circuits
• conference_location:
• conference_dates:
• publication_number: 4
• is_number: 4381435
• publication_year: 2007
• publication_date: Dec. 2007
• start_page: 2960
• end_page: 2967
• citing_paper_count: 19
• citing_patent_count: 0
• download_count: 1640
• insert_date: 20071127
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Video equipment
    • Optical noise
    • Pixel
    • CMOS process
    • High definition video
    • Optical imaging
    • Stimulated emission
    • Optical saturation
    • Optical sensors
  • author_terms:
    • CMOS image sensor
    • column amplifier
    • double CDS
    • double microlenses
    • high definition (HD)
    • high speed
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Low Noise
    • Dark Current
    • CMOS Process
    • Microlenses
    • Micro Lens
    • Low Dark Current
    • Image Quality
    • Vertical Line
    • Random Noise
    • Channel Noise
    • High Gain
    • Metal Layer
    • High Saturation
    • Noise Suppression
    • Active Noise Control
    • Noise-canceling
    • Conventional Structure
    • High-speed Imaging
    • Low-noise Amplifier
    • High SNR
    • High SNRs
    • Sensor Size
    • Complete Transfer
    • PIN Photodiode
    • Small Pixel
    • Conversion Gain
    • Effective Pixel
    • Pixel Height
    • Height Of Each Pixel
    • Gain Saturation
• authors:
  • Author Name: Hidekazu Takahashi
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37278586300
    ID: 37278586300
    Order: 1
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Tomoyuki Noda
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37692560700
    ID: 37692560700
    Order: 2
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Takashi Matsuda
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089086910
    ID: 37089086910
    Order: 3
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Takanori Watanabe
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37696681300
    ID: 37696681300
    Order: 4
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Mahito Shinohara
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37607433200
    ID: 37607433200
    Order: 5
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Toshiaki Endo
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37693301600
    ID: 37693301600
    Order: 6
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Shunsuke Takimoto
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37699911200
    ID: 37699911200
    Order: 7
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Ryuichi Mishima
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37088818084
    ID: 37088818084
    Order: 8
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Shigeru Nishimura
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37687809600
    ID: 37687809600
    Order: 9
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Katsuhito Sakurai
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37950787700
    ID: 37950787700
    Order: 10
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Hiroshi Yuzurihara
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37275328800
    ID: 37275328800
    Order: 11
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
  • Author Name: Shunsuke Inoue
    Affiliation: Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37275331200
    ID: 37275331200
    Order: 12
    Author Affiliations:
    • Semiconductor Device Development Center, Canon, Inc., Kanagawa, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 1944x1484
• dynamic_range: 69.6 dB
• pixel_size: 2.75 µm
• dark_current: 50 e-/s

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 60 fps
• power_consumption: 220 mW

Applications & Benefits

• cell_imaging: High image quality for full HD camcorders and digital cameras
• benefits: Low power consumption, high-speed operation, and improved sensitivity and resolution through advanced architecture.

Supporting Organizations

• supported_by: Canon Inc.

Manuscript Details

• publication_date: Dec. 2007

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

request_50bd77a5-e89a-4b8e-b639-3afc07ce1a7c-a_127in_296_mpixel_cmos_image_sensor_with_double_cds_architecture_for_full_highdefinition_camcorders.json