A 10000 Framess Cmos Digital Pixel Sensor

• doi: 10.1109/4.972156
• title: A 10000 frames/s CMOS digital pixel sensor
• publisher: IEEE
• isbn:
• issn: 1558-173X
• rank: 261
• access_type: LOCKED
• content_type: Journals
• abstract: A 352/spl times/288 pixel CMOS image sensor chip with per-pixel single-slope ADC and dynamic memory in a standard digital 0.18-/spl mu/m CMOS process is described. The chip performs "snapshot" image acquisition, parallel 8-bit A/D conversion, and digital readout at continuous rate of 10000 frames/s or 1 Gpixels/s with power consumption of 50 mW. Each pixel consists of a photogate circuit, a three-stage comparator, and an 8-bit 3T dynamic memory comprising a total of 37 transistors in 9.4/spl times/9.4 /spl mu/m with a fill factor of 15%. The photogate quantum efficiency is 13.6%, and the sensor conversion gain is 13.1 /spl mu/V/e/sup -/. At 1000 frames/s, measured integral nonlinearity is 0.22% over a 1-V range, rms temporal noise with digital CDS is 0.15%, and rms FPN with digital CDS is 0.027%. When operated at low frame rates, on-chip power management circuits permit complete powerdown between each frame conversion and readout. The digitized pixel data is read out over a 64-bit (8-pixel) wide bus operating at 167 MHz, i.e., over 1.33 GB/s. The chip is suitable for general high-speed imaging applications as well as for the implementation of several still and standard video rate applications that benefit from high-speed capture, such as dynamic range enhancement, motion estimation and compensation, and image stabilization.
• article_number: 972156
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=972156
• html_url: https://ieeexplore.ieee.org/document/972156/
• abstract_url: https://ieeexplore.ieee.org/document/972156/
• publication_title: IEEE Journal of Solid-State Circuits
• conference_location:
• conference_dates:
• publication_number: 4
• is_number: 20954
• publication_year: 2001
• publication_date: Dec. 2001
• start_page: 2049
• end_page: 2059
• citing_paper_count: 259
• citing_patent_count: 54
• download_count: 4459
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Pixel
    • CMOS process
    • Image converters
    • Energy consumption
    • Noise measurement
    • Circuit noise
    • Energy management
    • Dynamic range
    • Motion estimation
  • dynamic_index_terms:
    • Digital Sensor
    • Sensor Pixel
    • Digital Pixel
    • Dynamic Range
    • Frame Rate
    • Quantum Efficiency
    • Image Sensor
    • Camera Sensor
    • Fill Factor
    • Motion Estimation
    • High-speed Imaging
    • CMOS Process
    • Lower Frame
    • Low Frame Rate
    • Conversion Gain
    • High-speed Applications
    • Temporal Noise
    • Pixel Size
    • Images Of Samples
    • Integration Time
    • Sensor Array
    • Array Size
    • Reset Voltage
    • Test Chip
    • Gray Code
    • Grey Number
    • Digital Memory
    • High-speed Operation
    • Dark Current
    • NOT Gate
    • CMOS Inverter
    • Integration Of Sensors
    • Pixel Array
    • CMOS Technology
• authors:
  • Author Name: S. Kleinfelder
    Affiliation: Information Systems Laboratory, Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37278135600
    ID: 37278135600
    Order: 1
    Author Affiliations:
    • Information Systems Laboratory, Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
    • Department of Electrical and Computer Engineering, University of California, Irvine, CA, USA
  • Author Name: SukHwan Lim
    Affiliation: Information Systems Laboratory, Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37087574423
    ID: 37087574423
    Order: 2
    Author Affiliations:
    • Information Systems Laboratory, Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
  • Author Name: Xinqiao Liu
    Affiliation: Information Systems Laboratory, Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37087331874
    ID: 37087331874
    Order: 3
    Author Affiliations:
    • Information Systems Laboratory, Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
  • Author Name: A. El Gamal
    Affiliation: Information Systems Laboratory, Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37274961200
    ID: 37274961200
    Order: 4
    Author Affiliations:
    • Information Systems Laboratory, Department of Electrical Engineering, University of Stanford, Stanford, CA, USA

Image Sensor

• sensor_type: CMOS
• resolution: 352288 pixels
• dynamic_range: Not specified
• pixel_size: 9.4 µm
• dark_current: 130 mV/s

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 10000 fps
• sensitivity: 0.1 V/lux/s
• power_consumption: 50 mW
• noise: 0.15% rms temporal noise; 0.027% rms fixed-pattern noise

Applications & Benefits

• cell_imaging: High-speed imaging applications, dynamic range enhancement, motion estimation and compensation, image stabilization.
• benefits: High-speed digital image acquisition and reduced noise.

Supporting Organizations

• supported_by: Kodak, Canon, Hewlett-Packard, Agilent Technologies, Interval Research Inc.

Manuscript Details

• publication_date: Dec. 2001

Relevancy Score

• score: 10

Processed JSON Filename

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