A 05 M Pixel Frametransfer Ccd Image Sensor In 110 Nm Cmos
- doi: 10.1109/IEDM.2007.4419124
-
title: A 0.5 μm pixel frame-transfer CCD image sensor
in 110 nm CMOS
- publisher: IEEE
- isbn: 978-1-4244-1508-3
- issn: 2156-017X
- partnum: 07CH37934
- rank: 157
- access_type: LOCKED
- content_type: Conferences
-
abstract: The first image sensor with submicron pixel
pitch is reported. Test structures comprising 16 x 16 pixel
full-frame-transfer (FFT) CCDs with 0.5 μm pixels are fabricated in a
single-poly 110 nm CMOS process. Characterization results demonstrate
charge transfer efficiency of 99.9%, QE of 48% at 550 nm, conversion
gain of 193 μ V/e-, well capacity of 3550 e-, dark current of 50 e-/sec
with nonuniformity of 25%, peak SNR of 28 dB and dynamic range of 60 dB.
These performance metrics are within the range of consumer image sensors
and suggest that further reduction in pixel size is feasible.
- article_number: 4419124
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4419124
-
html_url:
https://ieeexplore.ieee.org/document/4419124/
-
abstract_url:
https://ieeexplore.ieee.org/document/4419124/
-
publication_title: 2007 IEEE International Electron
Devices Meeting
- conference_location: Washington, DC, USA
- conference_dates: 10-12 Dec. 2007
- publication_number: 4418847
- is_number: 4418848
- publication_year: 2007
- publication_date: 10-12 Dec. 2007
- start_page: 1003
- end_page: 1006
- citing_paper_count: 10
- citing_patent_count: 5
- download_count: 504
- insert_date: 20080104
-
index_terms:
-
ieee_terms:
- Pixel
- Charge-coupled image sensors
- CMOS image sensors
- Image sensors
- Testing
- CMOS process
- Charge transfer
- Image converters
- Dark current
- Dynamic range
-
dynamic_index_terms:
- Image Sensor
- Camera Sensor
- Performance Metrics
- Dark Current
- Efficient Charge Transfer
- Pixel Pitch
- Conversion Gain
- Improvement In Resolution
- Sensor Design
- Even And Odd
- Pixel Array
- Pixel Scale
- Reset Gate
-
isbn_formats:
-
format: CD,
value: 978-1-4244-1508-3,
isbnType: New-2005
-
format: Print ISBN,
value: 978-1-4244-1507-6,
isbnType: New-2005
-
authors:
-
Author Name: Keith Fife
Affiliation: Department of Electrical Engineering,
University of Stanford, Stanford, CA, USA
Author URL:
https://ieeexplore.ieee.org/author/37281720800
ID: 37281720800
Order: 1
Author Affiliations:
-
Department of Electrical Engineering, University of Stanford,
Stanford, CA, USA
-
Author Name: Abbas El Gamal
Affiliation: Department of Electrical Engineering,
University of Stanford, Stanford, CA, USA
Author URL:
https://ieeexplore.ieee.org/author/37274961200
ID: 37274961200
Order: 2
Author Affiliations:
-
Department of Electrical Engineering, University of Stanford,
Stanford, CA, USA
-
Author Name: H.-S. Philip Wong
Affiliation: Department of Electrical Engineering,
University of Stanford, Stanford, CA, USA
Author URL:
https://ieeexplore.ieee.org/author/37292823100
ID: 37292823100
Order: 3
Author Affiliations:
-
Department of Electrical Engineering, University of Stanford,
Stanford, CA, USA
Image Sensor
- sensor_type: CCD
- resolution: 16x16 pixels
- dynamic_range: 60 dB
- pixel_size: 0.5 µm
- dark_current: 50 e-/sec
Optical Data
- focal_length: N/A
- aperture: N/A
- field_of_view: N/A
- distortion: N/A
Performance Metrics
- frame_rate: N/A
- signal_to_noise_ratio: 28 dB
- sensitivity: N/A
- shutter_speed: N/A
- power_consumption: N/A
- noise: 3.7 e- rms
Applications & Benefits
-
cell_imaging: Enabled high-resolution imaging and depth
mapping for applications like microscopy and in-vivo imaging in medical
fields.
-
benefits: High charge transfer efficiency, large well
capacity, and potential for lower dark current.
Supporting Organizations
-
supported_by: CH Tseng, David Yen, Chun-Yao Ko, JC Liu,
Ming Li, SG Wu (CISR&D group at TSMC)
Manuscript Details
- publication_date: 10-12 Dec. 2007
Relevancy Score
- score: 10
-
missing_fields:
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- sensitivity
- shutter_speed
- power_consumption
Processed JSON Filename
request_679fa0cb-be83-4b6b-a416-84de01a7e3bc-a_05_m_pixel_frametransfer_ccd_image_sensor_in_110_nm_cmos.json