A 018 Mu Textm Cmos Image Sensor With Phasedelaycounting And Oversampling Dualslope Integrating Column Adcs Achieving 1Text Emathrm Rms Noise At 38 Mu Texts Conversion Time

• doi: 10.1109/JSSC.2017.2751610
• title: A 0.18- $\mu \text{m}$ CMOS Image Sensor With Phase-Delay-Counting and Oversampling Dual-Slope Integrating Column ADCs Achieving $1{\text {e}}^{-}_{\mathrm{ rms}}$ Noise at 3.8- $\mu \text{s}$ Conversion Time
• publisher: IEEE
• isbn:
• issn: 1558-173X
• rank: 142
• access_type: LOCKED
• content_type: Journals
• abstract: A CMOS image sensor (CIS) is presented, simultaneously achieving low noise and high frame rate. The imager innovatively employs column-parallel dual-slope (DS) integrating analog-to-digital converters (ADCs) based on a phase-delay-counting principle and using oversampling to suppress the readout thermal noise. A noise analysis of the DS-integrating ADC in correlated-double-sampling operation is provided to prove the low-noise advantage of the proposed architecture. Furthermore, the design considerations of the presented architecture are derived based on the analysis of nonideality effects. Based on these analytical results, design tradeoffs are discussed and applied in the test chip. The test chip, fabricated in a 4M1P 0.18-μm CIS technology, contains a 128 × 128 pixel array. The measurement results show that each of the 128 column-level ADCs converts a pixel in 3.8 μs and achieves a noise floor of 1erms-. The chip consumes 49 mW excluding the I/O power and 59 mW including the I/O power, resulting in a very good figure of merit value of 1.4 and 1.7 [e-.nJ], respectively.
• article_number: 8065020
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8065020
• html_url: https://ieeexplore.ieee.org/document/8065020/
• abstract_url: https://ieeexplore.ieee.org/document/8065020/
• publication_title: IEEE Journal of Solid-State Circuits
• conference_location:
• conference_dates:
• publication_number: 4
• is_number: 8271882
• publication_year: 2018
• publication_date: Feb. 2018
• start_page: 515
• end_page: 526
• citing_paper_count: 5
• citing_patent_count: 0
• download_count: 2938
• insert_date: 20171011
• index_terms:
  • ieee_terms:
    • Ring oscillators
    • Thermal noise
    • Radiation detectors
    • CMOS image sensors
    • Timing
  • author_terms:
    • Column analog-to-digital converters (ADCs)
    • DS ADC
    • dual slope (DS)
    • DS integrating ADC
    • high speed
    • image sensors
    • jitter
    • low noise
    • phase counting
    • ring oscillators
    • settling time
    • thermal noise
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Conversion Time
    • Figure Of Merit
    • Figure-of-merit
    • Thermal Noise
    • Current Noise
    • Noise Analysis
    • Test Chip
    • Integration Time
    • Input Signal
    • Resistance Values
    • Measurement Noise
    • Input Voltage
    • Phase State
    • Least Significant Bit
    • Low Bit
    • Noise Performance
    • Digital Circuits
    • Digital Circuitry
    • Noise Factors
    • Total Noise
    • Timing Diagram
    • Common-mode Voltage
    • Offset Voltage
    • Input-referred Noise
    • End Of The Conversation
    • End Of Conversion
    • Readout Noise
    • DC Gain
    • Delay Unit
    • Integrator Output
    • Maximum Noise
    • Noise Suppression
    • Active Noise Control
    • Noise-canceling
    • Noise Cancellation
    • Noise Values
    • Lower Cutoff
• authors:
  • Author Name: Ha Le-Thai
    Affiliation: Department of Electrical Engineering, Katholieke Universiteit Leuven, Leuven, Belgium
    Author URL: https://ieeexplore.ieee.org/author/38274255800
    ID: 38274255800
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, Katholieke Universiteit Leuven, Leuven, Belgium
  • Author Name: Genis Chapinal
    Affiliation: ON Semiconductor, Mechelen, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37330634500
    ID: 37330634500
    Order: 2
    Author Affiliations:
    • ON Semiconductor, Mechelen, Belgium
  • Author Name: Tomas Geurts
    Affiliation: ON Semiconductor, Mechelen, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37268617400
    ID: 37268617400
    Order: 3
    Author Affiliations:
    • ON Semiconductor, Mechelen, Belgium
  • Author Name: Georges G. E. Gielen
    Affiliation: Department of Electrical Engineering, Katholieke Universiteit Leuven, Leuven, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37275184800
    ID: 37275184800
    Order: 4
    Author Affiliations:
    • Department of Electrical Engineering, Katholieke Universiteit Leuven, Leuven, Belgium

Image Sensor

• sensor_type: CMOS
• resolution: 128x128 pixels
• dynamic_range: not specified
• pixel_size: 5.5 μm
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• power_consumption: 49 mW excluding I/O power, 59 mW including I/O power
• noise: 1 e−rms

Applications & Benefits

• cell_imaging: Important for low-light industrial, surveillance, and automotive applications.
• benefits: Simultaneously achieves low noise and high frame rate.

Supporting Organizations

• supported_by: ON Semiconductor, Katholieke Universiteit Leuven

Manuscript Details

• publication_date: Feb. 2018

Relevancy Score

• score: 10
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • use of microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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