79 1274Inch 32Mpixelprototype Cmos Image Sensor With 064 M Unit Pixels Separated By Fulldepth Deeptrench Isolation

• doi: 10.1109/ISSCC42613.2021.9365751
• title: 7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation
• publisher: IEEE
• isbn: 978-1-7281-9550-6
• issn: 0193-6530
• rank: 128
• access_type: LOCKED
• content_type: Conferences
• abstract: For years, there has been a strong drive for sub-micron pixel development, in spite of reaching the visible light diffraction limit, because a smaller pixel pitch of CMOS image sensors (CISs) is inevitably required for ever-miniaturizing camera modules as mobile devices incorporate more cameras, few of which are dedicated to ultra-high-resolution zoomed images [1]. To that end, image sensor vendors have tried to find new ways to avoid reduction in sensitivity and more crosstalk in the sensor through pixel architecture change and/or fabrication process refinement [2] –[4]. For example, a $0.7 \mu m$ pixel sensor was demonstrated with acceptable photodiode (PD) full-well capacity (FWC) of $\gt 6$,000e- as well as signal-to-noise ratio (SNR) of $\sim32$ dB without optical/electrical crosstalk by employing state-of-the-art full-depth deep-trench isolations (FDTIs). [4] However, further scaling requires elaborate fabrication innovation and layout ideas. At the same time, meeting every aspect of pixel performance compared to the previous generation becomes even more difficult, e.g., with respect to dark or illuminated characteristics, fixed-pattern or temporal noises, etc. The latter, in particular, is associated with in-pixel source-follower (SF) amplifiers. Therefore, electrical performance of scaled in-pixel transistors cannot be overlooked. In this paper, a 32-megpixel (MP) CIS with $0.64 \mu m$ unit pixels is demonstrated with FDTI design. Innovations in terms of fabrication and design to achieve this performance with scaling are discussed.
• article_number: 9365751
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9365751
• html_url: https://ieeexplore.ieee.org/document/9365751/
• abstract_url: https://ieeexplore.ieee.org/document/9365751/
• publication_title: 2021 IEEE International Solid-State Circuits Conference (ISSCC)
• conference_location: San Francisco, CA, USA
• conference_dates: 13-22 Feb. 2021
• publication_number: 9365732
• is_number: 9365735
• publication_year: 2021
• publication_date: 13-22 Feb. 2021
• start_page: 122
• end_page: 124
• citing_paper_count: 15
• citing_patent_count: 0
• download_count: 3006
• insert_date: 20210303
• index_terms:
  • ieee_terms:
    • Technological innovation
    • Crosstalk
    • Solid state circuit design
    • CMOS image sensors
    • Cameras
    • Transistors
    • Signal to noise ratio
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Pixel Units
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Signal To Noise
    • Signal To Noise Ratio
    • Crosstalk
    • Voltage Drop
    • Potential Drop
    • IR Drop
    • Previous Generations
    • Radiative Recombination
    • Carrier Recombination
    • Electron Hole Recombination
    • Reduction In Sensitivity
    • P-n Junction
    • Hot Electrons
    • Hot Carriers
    • polySia
    • Polycrystalline Silicon
    • Polysilicon
    • Interface Defects
    • Gate Oxide
    • Gate-oxide
    • Pixel Pitch
    • Reset Gate
    • Sensor Pixel
    • Camera Module
    • Temporal Noise
    • Electron Barrier
    • TCAD Simulation
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-7281-9550-6, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-7281-9549-0, isbnType: New-2005
• authors:
  • Author Name: JongEun Park
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37859424000
    ID: 37859424000
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    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Sungbong Park
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088803036
    ID: 37088803036
    Order: 2
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Kwansik Cho
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37421679100
    ID: 37421679100
    Order: 3
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Taehun Lee
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088367839
    ID: 37088367839
    Order: 4
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Changkyu Lee
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088367823
    ID: 37088367823
    Order: 5
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: DongHyun Kim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37984820700
    ID: 37984820700
    Order: 6
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Beomsuk Lee
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/38254963900
    ID: 38254963900
    Order: 7
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: SungIn Kim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088800877
    ID: 37088800877
    Order: 8
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Ho-Chul Ji
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/38546425300
    ID: 38546425300
    Order: 9
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: DongMo Im
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088368604
    ID: 37088368604
    Order: 10
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Haeyong Park
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/38105235700
    ID: 38105235700
    Order: 11
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Jinyoung Kim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37859671200
    ID: 37859671200
    Order: 12
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: JungHo Cha
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37086595802
    ID: 37086595802
    Order: 13
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Taehoon Kim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088367535
    ID: 37088367535
    Order: 14
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: In-Sung Joe
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37604037000
    ID: 37604037000
    Order: 15
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Soojin Hong
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37278994200
    ID: 37278994200
    Order: 16
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Chongkwang Chang
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088367914
    ID: 37088367914
    Order: 17
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Jingyun Kim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088367890
    ID: 37088367890
    Order: 18
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  • Author Name: WooGwan Shim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088801263
    ID: 37088801263
    Order: 19
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Taehee Kim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37280613500
    ID: 37280613500
    Order: 20
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Jamie Lee
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37086663669
    ID: 37086663669
    Order: 21
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Donghyuk Park
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37085741944
    ID: 37085741944
    Order: 22
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: EuiYeol Kim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37086347331
    ID: 37086347331
    Order: 23
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Howoo Park
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37733185100
    ID: 37733185100
    Order: 24
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Jaekyu Lee
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37367230200
    ID: 37367230200
    Order: 25
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Yitae Kim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/38067453800
    ID: 38067453800
    Order: 26
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: JungChak Ahn
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/38042315400
    ID: 38042315400
    Order: 27
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: YoungKi Hong
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37276997300
    ID: 37276997300
    Order: 28
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: ChungSam Jun
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088802088
    ID: 37088802088
    Order: 29
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: HyunChul Kim
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088368144
    ID: 37088368144
    Order: 30
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Chang-Rok Moon
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37287589400
    ID: 37287589400
    Order: 31
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea
  • Author Name: Ho-Kyu Kang
    Affiliation: Samsung Electronics, Hwaseong, Korea
    Author URL: https://ieeexplore.ieee.org/author/37278424500
    ID: 37278424500
    Order: 32
    Author Affiliations:
    • Samsung Electronics, Hwaseong, Korea

Image Sensor

• sensor_type: CMOS
• resolution: 32Mpixel
• dynamic_range: Not Specified
• pixel_size: 0.64 μm
• dark_current: 1.1 e-/s

Optical Data

• focal_length: Not Specified
• aperture: Not Specified
• field_of_view: Not Specified
• distortion: Not Specified

Performance Metrics

• frame_rate: Not Specified
• signal_to_noise_ratio: ~32 dB
• sensitivity: Not Specified
• shutter_speed: Not Specified
• power_consumption: Not Specified
• noise: Random telegraph signal (RTS) noise increased from 3ppm to 18ppm due to SF area reduction.

Applications & Benefits

• cell_imaging: Details not specified, but CMOS image sensors are used in various applications including smartphones and possibly medical devices.
• benefits: Achieved acceptable white pixel defects below 20ppm, which is improved from the previous generation.

Supporting Organizations

• supported_by: Samsung Electronics

Manuscript Details

• publication_date: 13-22 Feb. 2021

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • power_consumption
  • frame_rate
  • sensitivity
  • shutter_speed

Processed JSON Filename

request_0d187dd1-38ff-4531-90d3-45e16714f6ae-79_1274inch_32mpixelprototype_cmos_image_sensor_with_064_m_unit_pixels_separated_by_fulldepth_deeptrench_isolation.json