71 A 14Inch 8Mpixel Cmos Image Sensor With 3D Backsideilluminated 112M Pixel With Frontside Deeptrench Isolation And Vertical Transfer Gate

doi: 10.1109/ISSCC.2014.6757365
title: 7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate
publisher: IEEE
isbn: 978-1-4799-0918-6
issn: 2376-8606
rank: 125
access_type: LOCKED
content_type: Conferences
abstract: According to the trend towards high-resolution CMOS image sensors, pixel sizes are continuously shrinking, towards and below 1.0μm, and sizes are now reaching a technological limit to meet required SNR performance [1-2]. SNR at low-light conditions, which is a key performance metric, is determined by the sensitivity and crosstalk in pixels. To improve sensitivity, pixel technology has migrated from frontside illumination (FSI) to backside illumiation (BSI) as pixel size shrinks down. In BSI technology, it is very difficult to further increase the sensitivity in a pixel of near-1.0μm size because there are no structural obstacles for incident light from micro-lens to photodiode. Therefore the only way to improve low-light SNR is to reduce crosstalk, which makes the non-diagonal elements of the color-correction matrix (CCM) close to zero and thus reduces color noise [3]. The best way to improve crosstalk is to introduce a complete physical isolation between neighboring pixels, e.g., using deep-trench isolation (DTI). So far, a few attempts using DTI have been made to suppress silicon crosstalk. A backside DTI in as small as 1.12μm-pixel, which is formed in the BSI process, is reported in [4], but it is just an intermediate step in the DTI-related technology because it cannot completely prevent silicon crosstalk, especially for long wavelengths of light. On the other hand, front-side DTIs for FSI pixels [5] and BSI pixels [6] are reported. In [5], however, DTI is present not only along the periphery of each pixel, but also invades into the pixel so that it is inefficient in terms of gathering incident light and providing sufficient amount of photodiode area. In [6], the pixel size is as large as 2.0μm and it is hard to scale down with this technology for near 1.0μm pitch because DTI width imposes a critical limit on the sufficient amount of photodiode area for full-well capacity. Thus, a new technological advance is necessary to realize the ideal front DTI in a small size pixel near 1.0μm.
article_number: 6757365
pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6757365
html_url: https://ieeexplore.ieee.org/document/6757365/
abstract_url: https://ieeexplore.ieee.org/document/6757365/
publication_title: 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)
conference_location: San Francisco, CA, USA
conference_dates: 9-13 Feb. 2014
publication_number: 6747109
is_number: 6757318
publication_year: 2014
publication_date: 9-13 Feb. 2014
start_page: 124
end_page: 125
citing_paper_count: 20
citing_patent_count: 6
download_count: 5414
insert_date: 20140306
index_terms:
- ieee_terms:
  - Diffusion tensor imaging
  - Photodiodes
  - Crosstalk
  - Three-dimensional displays
  - Silicon
  - CMOS image sensors
  - Transistors
- dynamic_index_terms:
  - Vertical Gate
  - Deep Trench Isolation
  - Silicon
  - Pixel Size
  - Wavelength Of Light
  - Amount Of Area
  - Small Pixel
  - Long-wavelength Light
  - Longer Wavelengths Of Light
  - Longer-wavelength Light
  - Deep Trench
  - 2D Pixel
  - Μm Pitch
isbn_formats:
- format: Print ISBN, value: 978-1-4799-0918-6, isbnType: New-2005
- format: Electronic ISBN, value: 978-1-4799-0920-9, isbnType: New-2005
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  Affiliation: Samsung Electronics, Yongin, Korea
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  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: Yitae Kim
  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: Heegeun Jeong
  Affiliation: Samsung Electronics, Yongin, Korea
  Author URL: https://ieeexplore.ieee.org/author/37290388200
  ID: 37290388200
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- Author Name: Bumsuk Kim
  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 37067977300
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- Author Name: Hongki Kim
  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 37088711456
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  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 37859424000
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  Affiliation: Samsung Electronics, Yongin, Korea
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  Affiliation: Samsung Electronics, Yongin, Korea
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  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 37277270000
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- Author Name: Eunkyung Park
  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 37088712186
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- Author Name: Sangjun Choi
  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 37310419800
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- Author Name: Gyehun Choi
  Affiliation: Samsung Electronics, Yongin, Korea
  Author URL: https://ieeexplore.ieee.org/author/37088710004
  ID: 37088710004
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- Author Name: Haeyong Park
  Affiliation: Samsung Electronics, Yongin, Korea
  Author URL: https://ieeexplore.ieee.org/author/38105235700
  ID: 38105235700
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- Author Name: Yujung Choi
  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: Seungwook Lee
  Affiliation: Samsung Electronics, Yongin, Korea
  Author URL: https://ieeexplore.ieee.org/author/37089612053
  ID: 37089612053
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- Author Name: Yunkyung Kim
  Affiliation: Samsung Electronics, Yongin, Korea
  Author URL: https://ieeexplore.ieee.org/author/37086824897
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- Author Name: Y. Jay Jung
  Affiliation: Samsung Electronics, Yongin, Korea
  Author URL: https://ieeexplore.ieee.org/author/37089500405
  ID: 37089500405
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- Author Name: Donghyuk Park
  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 37085741944
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- Author Name: Seungjoo Nah
  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: Youngsun Oh
  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 38104255100
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- Author Name: Mihye Kim
  Affiliation: Samsung Electronics, Yongin, Korea
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  Affiliation: Samsung Electronics, Yongin, Korea
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  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: Ihara Hisanori
  Affiliation: Samsung Electronics, Yongin, Korea
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  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: Daniel-K J Lee
  Affiliation: Samsung Electronics, Yongin, Korea
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  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: GiDoo Lee
  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: Heesang Kown
  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 37088709463
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- Author Name: Sungho Choi
  Affiliation: Samsung Electronics, Yongin, Korea
  Author URL: https://ieeexplore.ieee.org/author/38253843800
  ID: 38253843800
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- Author Name: Jeonsook Lee
  Affiliation: Samsung Electronics, Yongin, Korea
  Author URL: https://ieeexplore.ieee.org/author/37089063868
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- Author Name: Dongyoung Jang
  Affiliation: Samsung Electronics, Yongin, Korea
  Author URL: https://ieeexplore.ieee.org/author/37087266398
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- Author Name: Youngchan Kim
  Affiliation: Samsung Electronics, Yongin, Korea
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  ID: 37066714900
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- Author Name: Tae Chan Kim
  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: Goto Hiroshige
  Affiliation: Samsung Electronics, Yongin, Korea
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  Affiliation: Samsung Electronics, Yongin, Korea
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- Author Name: Duckhyung Lee
  Affiliation: Samsung Electronics, Yongin, Korea
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  Affiliation: Samsung Electronics, Yongin, Korea
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Image Sensor

sensor_type: CMOS
resolution: 8Mpixel
dynamic_range: Not specified
pixel_size: 1.12µm
dark_current: 6e-/s

Optical Data

focal_length: Not specified
aperture: f/2.8
field_of_view: Not specified
distortion: Not specified

Performance Metrics

frame_rate: 50 fps
signal_to_noise_ratio: 2.0 dB higher than conventional BSI sensor

Applications & Benefits

cell_imaging: Not specified
benefits: Improved low-light SNR, reduced crosstalk, increased fill factor.

Supporting Organizations

supported_by: Samsung Electronics

Manuscript Details

publication_date: 9-13 Feb. 2014

Relevancy Score

score: 10
missing_fields:
- dynamic_range
- focal_length
- field_of_view
- distortion
- sensitivity
- shutter_speed
- power_consumption
- noise

Processed JSON Filename

request_45bc9f18-dc73-45ff-964e-ccff4e5f9fbf-71_a_14inch_8mpixel_cmos_image_sensor_with_3d_backsideilluminated_112m_pixel_with_frontside_deeptrench_isolation_and_vertical_transfer_gate.json