3Dic Stacking Process Investigation By Soldering Bonding Technology

• doi: 10.1109/ECTC51906.2022.00181
• title: 3DIC Stacking Process Investigation by Soldering Bonding Technology
• publisher: IEEE
• isbn: 978-1-6654-7944-8
• issn: 0569-5503
• rank: 95
• access_type: LOCKED
• content_type: Conferences
• abstract: Three-Dimension Integration Circuit (3DIC) is the key technology which widely applied in CMOS image sensor (CIS), AI and Could computing applications. Through 3DIC die stacking technology, it enables to reduce package form factor, support higher I/O density and increase the data transimission bandwidth between memory and active die. However, the heterogeneous integration between diifferent funtional die which leads varius process challenges, such as wafer surface coplanarization treatment, small fine pitch and solder joint capability during the die bond (DB) process. Hence, in this paper, we sucessfully demonstrated 3DIC soldering bond technlogy in chip on wafer process by using 50 um thickness dieIn this 3DIC study, the different bonding technologies will be investigated in this paper, mass reflow (MR) and thermal compression bond (TCB) are studied in chip on wafer process. Tranditionally, mass reflow is the most efficiency and cost effective bonding technology, but the high tempature thermal cycling during the reflow process would lead serious warpage effect on substrate side, which causes the bad bump joint quality such as non-wetting or bridge issue. Therefore, TCB is an alternative solution to reduce the warpage effect of die bond process, the thermal is conducted from heater head to die directly, which decrease the thermal effect on substrate side, so the good bump joint quality can be achieved by this bonding method. However, TCB has the feature of lower throughput and higher cost than MR, these key factors should be considered in the mass production stage.In the tranditional reflow bonding technlogy, the Cu pillar bump pitch which smaller than 40um pitch is the challenge since the limited solder volume, by EDX mapping analysis, we observed the intermetallic compounds (IMC) void issue after mass reflow process due to the incompleted IMC formation. However, in this study, we sucessfully demonstrated 20 um ubump pitch in chip on wafer structure by optmizing the solder tip volume.In this study, 3DIC with thin die structure brings potential benefit to increase the vertical interconnected I/O density by shorten the ubump pitch and well solder joint quality by using mass reflow technology, Undoubtedly, the 3DIC structure is the mainstream for the AI, Could computing and memory stacking in the IC package industry, it brings much cost benefit and time to market advantage by select the suitable bonding technology of 3DIC structure.
• article_number: 9816708
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9816708
• html_url: https://ieeexplore.ieee.org/document/9816708/
• abstract_url: https://ieeexplore.ieee.org/document/9816708/
• publication_title: 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
• conference_location: San Diego, CA, USA
• conference_dates: 31 May-3 June 2022
• publication_number: 9816066
• is_number: 9816372
• publication_year: 2022
• publication_date: 31 May-3 June 2022
• start_page: 1121
• end_page: 1125
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 970
• insert_date: 20220712
• index_terms:
  • ieee_terms:
    • Heating systems
    • Costs
    • Stacking
    • Time to market
    • Thermal conductivity
    • Throughput
    • Bonding
  • author_terms:
    • 3DIC
    • soldering bond
    • 20um bump pitch
    • chip on wafer
    • TCB
  • dynamic_index_terms:
    • Substrate Side
    • Heterogeneous Integration
    • Small Pitch
    • Joint Quality
    • Formation Of Intermetallic Compounds
    • Solder Joints
    • Energy-dispersive X-ray Spectroscopy
    • Thermal Stress
    • Process Flow
    • Technology Node
    • Filler Size
    • Flip-chip
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-6654-7944-8, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-6654-7943-1, isbnType: New-2005
• authors:
  • Author Name: Jay Li
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37088232367
    ID: 37088232367
    Order: 1
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
  • Author Name: Wei Jhen Chen
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37089447463
    ID: 37089447463
    Order: 2
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
  • Author Name: Joe Lin
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37833961900
    ID: 37833961900
    Order: 3
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
  • Author Name: Mu Hsuan Chan
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37089449397
    ID: 37089449397
    Order: 4
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
  • Author Name: Tank Lo
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37089447558
    ID: 37089447558
    Order: 5
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
  • Author Name: Bruce Xu
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37088228515
    ID: 37088228515
    Order: 6
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
  • Author Name: Liang Yih Hung
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37089448742
    ID: 37089448742
    Order: 7
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
  • Author Name: Nicholas Kao
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37295220900
    ID: 37295220900
    Order: 8
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
  • Author Name: Don Son Jiang
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37089424707
    ID: 37089424707
    Order: 9
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
  • Author Name: Yu-Po Wang
    Affiliation: Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.
    Author URL: https://ieeexplore.ieee.org/author/37293647200
    ID: 37293647200
    Order: 10
    Author Affiliations:
    • Siliconware Precision Industries Co. Ltd., Taichung, Taiwan, R.O.C.

Image Sensor

• sensor_type: CMOS
• resolution: Not explicitly stated
• dynamic_range: Not explicitly stated
• pixel_size: Not explicitly stated
• dark_current: Not explicitly stated

Optical Data

• focal_length: Not explicitly stated
• aperture: Not explicitly stated
• field_of_view: Not explicitly stated
• distortion: Not explicitly stated

Performance Metrics

• frame_rate: Not explicitly stated
• signal_to_noise_ratio: Not explicitly stated
• sensitivity: Not explicitly stated
• shutter_speed: Not explicitly stated
• power_consumption: Not explicitly stated
• noise: Not explicitly stated

Applications & Benefits

• cell_imaging: CMOS image sensors are used in a variety of applications such as smartphones, medical devices, and automotive systems.
• benefits: Transform light into electrical signals enabling digital imaging.

Supporting Organizations

• supported_by: Siliconware Precision Industries Co. Ltd.

Manuscript Details

• publication_date: 31 May-3 June 2022

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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