3D Tcad Simulation Of Advanced Cmos Image Sensors

• doi: 10.1109/SISPAD.2011.6035082
• title: 3D TCAD simulation of advanced CMOS image sensors
• publisher: IEEE
• isbn: 978-1-61284-417-6
• issn: 1946-1569
• partnum: 11TH9194
• rank: 81
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper presents a full 3-Dimensionnal TCAD simulation methodology for advanced CMOS image sensors. In order to consider 3D process effects, full 3D TCAD process simulations have been carried out on different advanced pixels. Based upon the obtained 3D doping distributions, 3D opto-electrical device simulation results have been compared to both 2D based approaches and experimental results. Full 3D simulation results show a qualitative agreement with measurements.
• article_number: 6035082
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6035082
• html_url: https://ieeexplore.ieee.org/document/6035082/
• abstract_url: https://ieeexplore.ieee.org/document/6035082/
• publication_title: 2011 International Conference on Simulation of Semiconductor Processes and Devices
• conference_location: Osaka, Japan
• conference_dates: 8-10 Sept. 2011
• publication_number: 6027503
• is_number: 6034916
• publication_year: 2011
• publication_date: 8-10 Sept. 2011
• start_page: 187
• end_page: 190
• citing_paper_count: 4
• citing_patent_count: 2
• download_count: 1401
• insert_date: 20111006
• index_terms:
  • ieee_terms:
    • Three dimensional displays
    • Solid modeling
    • Photodiodes
    • Semiconductor device modeling
    • Semiconductor process modeling
    • Doping
    • Mathematical model
  • author_terms:
    • Image sensors
    • 3D simulation
    • CMOS process
    • TCAD
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • 3D Simulation
    • TCAD Simulation
    • Simulation Results
    • Simulation Process
    • Advanced Imaging
    • Advanced Sensors
    • Device Simulation
    • 3D Device
    • Silicon
    • 3D Structure
    • Finite-difference Time-domain
    • FDTD
    • Finite-difference Time-domain Method
    • Continuous Approach
    • Continuum Approach
    • Lateral Extension
    • Optical Generation
    • Optical Propagation
    • Optical Simulation
    • 3D Topography
    • 3D Diffusion
    • Doping Profile
    • Experimental Qe
• isbn_formats:
  • format: CD, value: 978-1-61284-417-6, isbnType: New-2005
  • format: Print ISBN, value: 978-1-61284-419-0, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-61284-418-3, isbnType: New-2005
• authors:
  • Author Name: Z. Essa
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37887598600
    ID: 37887598600
    Order: 1
    Author Affiliations:
    • STMicroelectronics, Crolles, France
    • PHELMA Grenoble INP, Grenoble, France
  • Author Name: P. Boulenc
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37318154400
    ID: 37318154400
    Order: 2
    Author Affiliations:
    • STMicroelectronics, Crolles, France
  • Author Name: C. Tavernier
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37407732700
    ID: 37407732700
    Order: 3
    Author Affiliations:
    • STMicroelectronics, Crolles, France
  • Author Name: F. Hirigoyen
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37887597500
    ID: 37887597500
    Order: 4
    Author Affiliations:
    • STMicroelectronics, Crolles, France
  • Author Name: A. Crocherie
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37887596600
    ID: 37887596600
    Order: 5
    Author Affiliations:
    • STMicroelectronics, Crolles, France
  • Author Name: J. Michelot
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37887597300
    ID: 37887597300
    Order: 6
    Author Affiliations:
    • STMicroelectronics, Crolles, France
  • Author Name: D. Rideau
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37267692100
    ID: 37267692100
    Order: 7
    Author Affiliations:
    • STMicroelectronics, Crolles, France

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 1.4µm pitch
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: e-

Applications & Benefits

• cell_imaging: Advanced CMOS image sensors used in various applications such as smartphones and medical devices.
• benefits: High sensitivity, improved imaging performance through 3D simulations.

Supporting Organizations

• supported_by: STMicroelectronics, PHELMA Grenoble INP

Manuscript Details

• publication_date: 8-10 Sept. 2011

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_c312c5ed-d677-4d47-9c3d-7a9aee021fec-3d_tcad_simulation_of_advanced_cmos_image_sensors.json