3D Integration Technology Status And Application Development

• doi: 10.1109/ESSCIRC.2010.5619857
• title: 3D Integration technology: Status and application development
• publisher: IEEE
• isbn: 978-1-4244-6662-7
• issn: 1930-8833
• partnum: 10EX4311
• rank: 74
• access_type: LOCKED
• content_type: Conferences
• abstract: As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transistor gate dimensions alone will not be able to overcome the performance and cost problems of future IC fabrication. Today 3D integration based on through silicon vias (TSV) is a well-accepted approach to overcome the performance bottleneck and simultaneously shrink the form factor. Several full 3D process flows have been demonstrated, however there are still no microelectronic products based on 3D TSV technologies in the market — except CMOS image sensors. 3D chip stacking of memory and logic devices without TSVs is already widely introduced in the market. Applying TSV technology for memory on logic will increase the performance of these advanced products and simultaneously shrink the form factor. In addition to the enabling of further improvement of transistor integration densities, 3D integration is a key technology for integration of heterogeneous technologies. Miniaturized MEMS/IC products represent a typical example for such heterogeneous systems demanding for smart system integration rather than extremely high transistor integration densities. The European 3D technology platform that has been established within the EC funded e-CUBES project is focusing on the requirements coming from heterogeneous systems. The selected 3D integration technologies are optimized concerning the availability of devices (packaged dies, bare dies or wafers) and the requirements of performance and form factor. There are specific technology requirements for the integration of MEMS/NEMS devices which differ from 3D integrated ICs (3D-IC). While 3D-ICs typically show a need for high interconnect densities and conductivities, TSV technologies for the integration of MEMS to ICs may result in lower electrical performance but have to fulfill other requirements, e. g. mechanical stability issues. 3D integration of multiple MEMS/IC stacks was successfully demonstrated for the fabrication of miniaturized sensor systems (e-CUBES), as for automotive, health & fitness and aeronautic applications.
• article_number: 5619857
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5619857
• html_url: https://ieeexplore.ieee.org/document/5619857/
• abstract_url: https://ieeexplore.ieee.org/document/5619857/
• publication_title: 2010 Proceedings of ESSCIRC
• conference_location: Seville, Spain
• conference_dates: 14-16 Sept. 2010
• publication_number: 5609034
• is_number: 5619583
• publication_year: 2010
• publication_date: 14-16 Sept. 2010
• start_page: 9
• end_page: 16
• citing_paper_count: 60
• citing_patent_count: 0
• download_count: 3452
• insert_date: 20101104
• index_terms:
  • ieee_terms:
    • Three dimensional displays
    • Through-silicon vias
    • Stacking
    • Silicon
    • Performance evaluation
    • Fabrication
    • Copper
  • dynamic_index_terms:
    • 3D Technology
    • 3D Integration
    • 3D Integration Technology
    • Form Factor
    • Performance Requirements
    • Operational Requirements
    • Key Technology
    • Heterogeneous Systems
    • Semiconductor Industry
    • Semiconductor Manufacturing
    • Semiconductor Fabrication
    • Availability Of Devices
    • Access Devices
    • Technology Market
    • 3D Stacks
    • European Platform
    • Low Cost
    • Thinning
    • Underweight
    • High Aspect Ratio
    • Intermetallic
    • Metal Compounds
    • Intermetallic Compounds
    • Silicon Substrate
    • Si Substrate
    • Wireless Sensor
    • Heterogeneous Integration
    • Multichip Module
    • Wireless Sensor Nodes
    • polySia
    • Polycrystalline Silicon
    • Polysilicon
    • High-performance Applications
    • Flip-chip
    • Microbumps
    • Silicon-on-insulator
    • Buried Oxide
    • 3D Architecture
    • Electroplating
    • Electrochemical Deposition
    • European Industry
    • Thermal Oxidation
• isbn_formats:
  • format: Print ISBN, value: 978-1-4244-6662-7, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-6664-1, isbnType: New-2005
• authors:
  • Author Name: Peter Ramm
    Affiliation: Fraunhofer EMFT (formerly IZM-M), Munich, Germany
    Author URL: https://ieeexplore.ieee.org/author/38314163500
    ID: 38314163500
    Order: 1
    Author Affiliations:
    • Fraunhofer EMFT (formerly IZM-M), Munich, Germany
  • Author Name: Armin Klumpp
    Affiliation: Fraunhofer EMFT (formerly IZM-M), Munich, Germany
    Author URL: https://ieeexplore.ieee.org/author/37411813300
    ID: 37411813300
    Order: 2
    Author Affiliations:
    • Fraunhofer EMFT (formerly IZM-M), Munich, Germany
  • Author Name: Josef Weber
    Affiliation: Fraunhofer EMFT (formerly IZM-M), Munich, Germany
    Author URL: https://ieeexplore.ieee.org/author/37400958400
    ID: 37400958400
    Order: 3
    Author Affiliations:
    • Fraunhofer EMFT (formerly IZM-M), Munich, Germany
  • Author Name: Nicolas Lietaer
    Affiliation: SINTEF ICT, Oslo, Norway
    Author URL: https://ieeexplore.ieee.org/author/37398139100
    ID: 37398139100
    Order: 4
    Author Affiliations:
    • SINTEF ICT, Oslo, Norway
  • Author Name: Maaike Taklo
    Affiliation: SINTEF ICT, Oslo, Norway
    Author URL: https://ieeexplore.ieee.org/author/37572352100
    ID: 37572352100
    Order: 5
    Author Affiliations:
    • SINTEF ICT, Oslo, Norway
  • Author Name: Walter De Raedt
    Affiliation: IMEC-SSET-Wireless, Leuven, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37275708200
    ID: 37275708200
    Order: 6
    Author Affiliations:
    • IMEC-SSET-Wireless, Leuven, Belgium
  • Author Name: Thomas Fritzsch
    Affiliation: Fraunhofer Institute of Reliability and Microintegration (IZM), Berlin, Germany
    Author URL: https://ieeexplore.ieee.org/author/37281806600
    ID: 37281806600
    Order: 7
    Author Affiliations:
    • Fraunhofer Institute of Reliability and Microintegration (IZM), Berlin, Germany
  • Author Name: Pascal Couderc
    Affiliation: è3D PLUS, Buc, France
    Author URL: https://ieeexplore.ieee.org/author/37593244000
    ID: 37593244000
    Order: 8
    Author Affiliations:
    • è3D PLUS, Buc, France

Image Sensor

• sensor_type: CMOS
• resolution: 2M pixels
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Mobile-phone camera module using TSV Technology.
• benefits: Enables compact design, high performance, and miniaturization in mobile applications.

Supporting Organizations

• supported_by: STMicroelectronics, Aptina, Samsung, Toshiba, ZyCube

Manuscript Details

• publication_date: 14-16 Sept. 2010

Relevancy Score

• score: 8
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • design considerations

Processed JSON Filename

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