2D Photondetectionprobability Simulation And A Novel Guardring Design For
Small Cmos Singlephoton Avalanche Diodes
- doi: 10.1109/TED.2021.3119264
-
title: 2-D Photon-Detection-Probability Simulation and
a Novel Guard-Ring Design for Small CMOS Single-Photon Avalanche Diodes
- publisher: IEEE
- isbn:
- issn: 1557-9646
- rank: 37
- access_type: LOCKED
- content_type: Journals
-
abstract: CMOS single-photon avalanche diode (SPAD)
array is a high-timing-resolution photon-counting image sensor. Pixel
size shrinkage for high image resolution is highly desirable but
hindered by the lowered photon-detection-probability (PDP) as the edge
area becomes significant. We propose and demonstrate a parameter-free
method for simulating PDP with the edge effect. Considering the doping
profile, electric field, photon generation, and trigger probability
distributions in two dimensions, the PDP reduction at the device edge is
analyzed in a quantitative way. Besides, a novel guard-ring design for
enhancing PDP of small SPAD has been proposed and simulated by our
method. A threefold enhancement was obtained with the newly designed
guard-ring structure compared with the original one. Our work is useful
for developing small-pitch SPAD array for high-resolution imaging
applications.
- article_number: 9576104
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9576104
-
html_url:
https://ieeexplore.ieee.org/document/9576104/
-
abstract_url:
https://ieeexplore.ieee.org/document/9576104/
-
publication_title: IEEE Transactions on Electron
Devices
- conference_location:
- conference_dates:
- publication_number: 16
- is_number: 9780469
- publication_year: 2022
- publication_date: June 2022
- start_page: 2873
- end_page: 2878
- citing_paper_count: 4
- citing_patent_count: 0
- download_count: 1122
- insert_date: 20211015
-
index_terms:
-
ieee_terms:
- Single-photon avalanche diodes
- Force
- Mathematical models
- Semiconductor device modeling
- Photonics
- Charge carrier processes
- Image edge detection
-
author_terms:
- CMOS
- photo detector
- photon-detection probability (PDP)
- single-photon avalanche diode (SPAD)
- small pitch SPAD array
-
dynamic_index_terms:
- Single-photon Avalanche Diode
- Single Photon Avalanche Diode
- High-resolution
- Field Distribution
- Edge Effects
- Image Sensor
- Camera Sensor
- Electric Field Distribution
- Doping Profile
- Central Region
- Coordinate System
- Horizontal Plane
- Horizontal Direction
- Horizontal Distance
- Electron Hole
- Light Detection And Ranging
- Lidar
- Bias Voltage
- Enhancement Factor
- Black Circles
- Depletion Region
- Space Charge Region
- Depletion Layer
- Depletion Zone
- Impact Ionization
- Fluorescence Lifetime Imaging Microscopy
- FLIM
- Fluorescence Lifetime Imaging
- CMOS Process
- Left Axis
- Electric Lines
- Motion Of Carriers
- Optical Simulation
- High-resolution Array
-
authors:
-
Author Name: Chun-Hsien Liu
Affiliation: Institute of Electronics, National
Yang Ming Chiao Tung University, Hsinchu, Taiwan
Author URL:
https://ieeexplore.ieee.org/author/37089379449
ID: 37089379449
Order: 1
Author Affiliations:
-
Institute of Electronics, National Yang Ming Chiao Tung
University, Hsinchu, Taiwan
-
Author Name: Chin-An Hsien
Affiliation: Institute of Electronics, National
Yang Ming Chiao Tung University, Hsinchu, Taiwan
Author URL:
https://ieeexplore.ieee.org/author/37089387841
ID: 37089387841
Order: 2
Author Affiliations:
-
Institute of Electronics, National Yang Ming Chiao Tung
University, Hsinchu, Taiwan
- Egis Technology Inc., Hsinchu, Taiwan
-
Author Name: Sheng-Di Lin
Affiliation: Institute of Electronics, National
Yang Ming Chiao Tung University, Hsinchu, Taiwan
Author URL:
https://ieeexplore.ieee.org/author/37308339200
ID: 37308339200
Order: 3
Author Affiliations:
-
Institute of Electronics, National Yang Ming Chiao Tung
University, Hsinchu, Taiwan
Image Sensor
- sensor_type: CMOS
- resolution: N/A
- dynamic_range: N/A
- pixel_size: 1 μm to 20 μm
- dark_current: N/A
Optical Data
- focal_length: N/A
- aperture: N/A
- field_of_view: N/A
- distortion: N/A
Performance Metrics
- frame_rate: N/A
- signal_to_noise_ratio: N/A
- sensitivity: N/A
- shutter_speed: N/A
- power_consumption: N/A
- noise: N/A
Applications & Benefits
-
cell_imaging: Used in fluorescence lifetime imaging
microscopy, time-gated Raman spectroscopy, radiometric temperature
measurement, and LiDAR.
-
benefits: High sensitivity down to single-photon level,
high timing resolution better than 100 ps.
Supporting Organizations
-
supported_by: Ministry of Science and Technology,
Taiwan.
Manuscript Details
- publication_date: June 2022
Relevancy Score
- score: 9
-
missing_fields:
- fill factor
- quantum efficiency
- dynamic range
- power consumption
- readout speed
- temporal noise
- fixed-pattern noise
- analog-to-digital conversion techniques
- use of microlenses
- on-chip colour filters
- global or rolling shutters
- backside illumination
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