2D And 3Dintegrated Image Sensor

• doi: 10.1109/MWSCAS.2010.5548799
• title: 2D and 3D-integrated image sensor
• publisher: IEEE
• isbn: 978-1-4244-7772-2
• issn: 1548-3746
• partnum: 10CH38261
• rank: 55
• access_type: LOCKED
• content_type: Conferences
• abstract: This work develops a 2 Dimension (2D)/ 3 Dimension (3D)-integrated image sensor that adopts the same photodiode under different biased voltages and integrated sensing circuitry. By using the TSMC CMOS technology, four different photodiodes, N-well_P-substrate, P-diffusion_N-well, Pdiffusion_ N-well_P-substrate and N-diffusion_P-substrate, are available. Since P-substrate is used for grounding and P-diffusion_N-well has poor quantum efficiency, only the photodiode of P-diffusion_N-well_P-substrate can be employed by biasing two different voltages to P-diffusion. If the photodiode is driven by little smaller than its breakdown voltage, it functions at the Geiger mode to work for 3D depth sensing. Otherwise, this photodiode performs 2-D gray-level sensing. In the sensing circuitry, a feed-back mechanism is employed to yield a charge supply for a high dynamic range of 2-D sensing, and a feed-back inverter is adopted to boost the processing speed of 3-D sensing. These two feedbacks are effectively integrated in an active pixel to establish 2D/3D image sensor. Based on the TSMC 0.35μm 2P4M technology, a 352×288-pixel 2D/3D image sensor was implemented where its dynamic range can reach 134dB under photocurrents from 10-13A to 5×10-7A and sensing time can be accelerated to 16.3ns. The proposed image sensor can effectively capture 2D and 3D information of an object at the same location without additional alignment and post-processing.
• article_number: 5548799
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5548799
• html_url: https://ieeexplore.ieee.org/document/5548799/
• abstract_url: https://ieeexplore.ieee.org/document/5548799/
• publication_title: 2010 53rd IEEE International Midwest Symposium on Circuits and Systems
• conference_location: Seattle, WA, USA
• conference_dates: 1-4 Aug. 2010
• publication_number: 5542407
• is_number: 5548547
• publication_year: 2010
• publication_date: 1-4 Aug. 2010
• start_page: 292
• end_page: 295
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 434
• insert_date: 20100816
• index_terms:
  • ieee_terms:
    • Image sensors
    • Photodiodes
    • Voltage
    • CMOS technology
    • Dynamic range
    • CMOS image sensors
    • Integrated circuit technology
    • Grounding
    • Integrated circuit yield
    • Inverters
  • dynamic_index_terms:
    • 2D Images
    • Image Sensor
    • Camera Sensor
    • 2D Sensor
    • 2D Image Sensor
    • Dynamic Range
    • Feedback Mechanism
    • Inverter
    • High Dynamic Range
    • CMOS Technology
    • 3D Images
    • Depth Camera
    • RGB-D Camera
    • Depth Sensor
    • 3D Camera
    • Avalanche Photodiode
    • 3D Mode
    • Shift Register
    • 3D Sensor
    • Object Depth
    • Time-to-digital Converter
    • 3D Depth
    • 2D Mode
    • Reverse Bias Voltage
    • High Response Speed
    • High-speed Response
    • Low Cost Power
    • 3D Perception
    • 3D Pictures
    • 3D Impression
• isbn_formats:
  • format: CD, value: 978-1-4244-7772-2, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-7771-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-7773-9, isbnType: New-2005
• authors:
  • Author Name: Zhe Ming Liu
    Affiliation: Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/38237780400
    ID: 38237780400
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
  • Author Name: Ming-Chih Lin
    Affiliation: Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/38253010100
    ID: 38253010100
    Order: 2
    Author Affiliations:
    • Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
  • Author Name: Chieh Ning Chan
    Affiliation: Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37539379500
    ID: 37539379500
    Order: 3
    Author Affiliations:
    • Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
  • Author Name: Oscal T.-C. Chen
    Affiliation: Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37271445000
    ID: 37271445000
    Order: 4
    Author Affiliations:
    • Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan

Image Sensor

• sensor_type: CMOS
• resolution: 352x288 pixels
• dynamic_range: 134dB
• pixel_size: 30μm x 30μm (also mentioned as 10μm x 10μm for smaller size)
• dark_current: not explicitly stated but photons induce photocurrent; detection is based on current from 10^-13 A to 5×10^-7 A

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not mentioned

Performance Metrics

• frame_rate: 30 frames per second
• power_consumption: 280mW
• noise: not explicitly stated, but discusses fixed-pattern noise reduction through CDS

Applications & Benefits

• cell_imaging: not specified in detail
• benefits: Can effectively capture 2D and 3D information of an object at the same location without additional alignment and post-processing, low hardware cost and low power consumption.

Supporting Organizations

• supported_by: National Science Council, Taiwan under contract number NSC 97-2221-E-194-060-MY3

Manuscript Details

• publication_date: 1-4 Aug. 2010

Relevancy Score

• score: 9
• missing_fields:
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination
  • quantum efficiency
  • analog-to-digital conversion techniques
  • temporal noise

Processed JSON Filename

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