256256 Hybrid Hgcdte Infrared Focal Plane Arrays

• doi: 10.1109/16.78385
• title: 256*256 hybrid HgCdTe infrared focal plane arrays
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 51
• access_type: LOCKED
• content_type: Journals
• abstract: Hybrid HgCdTe 256*256 focal plane arrays have been developed to meet the sensitivity, resolution, and field-of-view requirements of high-performance medium-wavelength infrared (MWIR) imaging systems. The detector arrays for these hybrids are fabricated on substrates that reduce or eliminate the thermal expansion mismatch to the silicon readout circuit. The readouts are foundry-processed CMOS switched-FET circuits that have charge capacities greater than 10/sup 7/ electrons and a single video output capable of 20-MHz data rates. The high quantum efficiency, tunable absorption wavelength, and broad operating temperature range of these large HgCdTe staring focal plane arrays give them significant advantages over competing sensors. The mature Producible Alternative to CdTe for Epitaxy-1 (PACE-1) technology, using sapphire detector substrates, has demonstrated 256*256 MWIR arrays with mean laboratory noise equivalent temperature difference (NETD) of 9 mK for a 4.9- mu m cutoff wavelength, 40- mu m pixel size, and 80-K operating temperature. RMS detector response nonuniformities are less than 4%, and pixel yields are greater than 99%. The newly developed PACE-3 process uses silicon for the detector substrate to eliminate completely the thermal mismatch with the silicon readout circuit. It has the potential for similar performance in even larger array sizes. A 640*480 hybrid array is under development.<>
• article_number: 78385
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=78385
• html_url: https://ieeexplore.ieee.org/document/78385/
• abstract_url: https://ieeexplore.ieee.org/document/78385/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 2585
• publication_year: 1991
• publication_date: May 1991
• start_page: 1104
• end_page: 1109
• citing_paper_count: 39
• citing_patent_count: 10
• download_count: 220
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Sensor arrays
    • Detectors
    • Temperature sensors
    • Substrates
    • Silicon
    • Circuits
    • Image resolution
    • Infrared imaging
    • High-resolution imaging
    • Optical imaging
  • dynamic_index_terms:
    • Focal Plane
    • Back Focal Plane
    • Silicon
    • Field Of View
    • Data Rate
    • Data Evaluation
    • Infrared Imaging
    • Thermal Imaging
    • Infrared Camera
    • Thermal Camera
    • Array Detector
    • Thermal Expansion
    • Coefficient Of Thermal Expansion
    • Sapphire
    • Quantum Efficiency
    • Cut-off Wavelength
    • Cutoff Wavelengths
    • Operating Temperature Range
    • Thermal Mismatch
    • Readout Circuit
    • Thermal Expansion Mismatch
    • Thermal Cycler
    • PCR Machine
    • PCR Cycles
    • Thermocycler
    • Calibration Procedure
    • Dark Current
    • Combination Of Sensitivity
    • Epitaxial Layer
    • Epilayer
    • Infrared Detector
• authors:
  • Author Name: R.B. Bailey
    Affiliation: Rockwell International Science Center, Thousand Oaks, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37087989976
    ID: 37087989976
    Order: 1
    Author Affiliations:
    • Rockwell International Science Center, Thousand Oaks, CA, USA
  • Author Name: L.J. Kozlowski
    Affiliation: Rockwell International Science Center, Thousand Oaks, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37436066900
    ID: 37436066900
    Order: 2
    Author Affiliations:
    • Rockwell International Science Center, Thousand Oaks, CA, USA
  • Author Name: J. Chen
    Affiliation: Rockwell International Science Center, Thousand Oaks, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37087988260
    ID: 37087988260
    Order: 3
    Author Affiliations:
    • Rockwell International Science Center, Thousand Oaks, CA, USA
  • Author Name: D.Q. Bui
    Affiliation: Rockwell International Science Center, Thousand Oaks, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37088824730
    ID: 37088824730
    Order: 4
    Author Affiliations:
    • Rockwell International Science Center, Thousand Oaks, CA, USA
  • Author Name: K. Vural
    Affiliation: Rockwell International Science Center, Thousand Oaks, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37924469100
    ID: 37924469100
    Order: 5
    Author Affiliations:
    • Rockwell International Science Center, Thousand Oaks, CA, USA
  • Author Name: D.D. Edwall
    Affiliation: Rockwell International Science Center, Thousand Oaks, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37271134500
    ID: 37271134500
    Order: 6
    Author Affiliations:
    • Rockwell International Science Center, Thousand Oaks, CA, USA
  • Author Name: R.V. Gil
    Affiliation: Rockwell International Science Center, Thousand Oaks, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37088826200
    ID: 37088826200
    Order: 7
    Author Affiliations:
    • Rockwell International Science Center, Thousand Oaks, CA, USA
  • Author Name: A.B. Vanderwyck
    Affiliation: Rockwell International Science Center, Thousand Oaks, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37088825913
    ID: 37088825913
    Order: 8
    Author Affiliations:
    • Rockwell International Science Center, Thousand Oaks, CA, USA
  • Author Name: E.R. Gertner
    Affiliation: Rockwell International Science Center, Thousand Oaks, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37568949400
    ID: 37568949400
    Order: 9
    Author Affiliations:
    • Rockwell International Science Center, Thousand Oaks, CA, USA
  • Author Name: M.B. Gubala
    Affiliation: Tactical Systems Division, Rockwell International, Duluth, GA, USA
    Author URL: https://ieeexplore.ieee.org/author/37088826508
    ID: 37088826508
    Order: 10
    Author Affiliations:
    • Tactical Systems Division, Rockwell International, Duluth, GA, USA

Image Sensor

• sensor_type: CMOS
• resolution: 256x256
• dynamic_range: Not specified
• pixel_size: 40 µm
• dark_current: Approximately 3.5 x 10^5 e-/s (56 fA)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Nearly 100% optical fill factor
• distortion: Not specified

Performance Metrics

• frame_rate: 20 MHz
• noise: Lower than 0.3 fA/Hz^0.5 at 1Hz under moderate bias (-50mV)

Applications & Benefits

• cell_imaging: Enabled in thermal imaging systems, missile seeker demonstrations, and infrared astronomical telescopes.
• benefits: Combination of sensitivity, resolution, and field-of-view unmatched by competing sensor technologies.

Supporting Organizations

• supported_by: Rockwell International Science Center, Tactical Systems Division

Manuscript Details

• publication_date: May 1991

Relevancy Score

• score: 10

Processed JSON Filename

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