200 Nm Wafertowafer Overlay Accuracy In Wafer Level Cusio2 Hybrid Bonding For Bsi Cis

• doi: 10.1109/EPTC.2015.7412403
• title: <200 nm Wafer-to-wafer overlay accuracy in wafer level Cu/SiO2 hybrid bonding for BSI CIS
• publisher: IEEE
• isbn: 978-1-4673-7268-8
• issn:
• rank: 134
• access_type: LOCKED
• content_type: Conferences
• abstract: Sub 200 nm wafer-to-wafer (w2w) overlay accuracy on the entire 300 mm wafer was successfully demonstrated via wafer level Cu/SiO2 hybrid bonding. Cu bonding pads relevant for back-side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor (CIS) were used for the experiment. Further, a crucial component to improve the overlay accuracy, namely the overlay model which identifies systematic alignment errors, was described.
• article_number: 7412403
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7412403
• html_url: https://ieeexplore.ieee.org/document/7412403/
• abstract_url: https://ieeexplore.ieee.org/document/7412403/
• publication_title: 2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)
• conference_location: Singapore
• conference_dates: 2-4 Dec. 2015
• publication_number: 7395505
• is_number: 7412260
• publication_year: 2015
• publication_date: 2-4 Dec. 2015
• start_page: 1
• end_page: 4
• citing_paper_count: 13
• citing_patent_count: 0
• download_count: 1506
• insert_date: 20160225
• index_terms:
  • ieee_terms:
    • Bonding
    • Surface treatment
    • Wafer bonding
    • Annealing
    • Rough surfaces
    • Surface roughness
  • dynamic_index_terms:
    • Wafer Level
    • Backside Illuminated
    • Hybrid Bonding
    • Overlay Accuracy
    • Systematic Errors
    • Image Sensor
    • Camera Sensor
    • Feedback Loop
    • Measurement Points
    • Grain Growth
    • Alignment Accuracy
    • Plasma-enhanced Chemical Vapor Deposition
    • PECVD
    • Geometric Transformation
    • Lateral Shift
    • Lateral Rotation
• isbn_formats:
  • format: USB ISBN, value: 978-1-4673-7268-8, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4673-7269-5, isbnType: New-2005
• authors:
  • Author Name: B. Rebhan
    Affiliation: EV Group, Austria
    Author URL: https://ieeexplore.ieee.org/author/38269002400
    ID: 38269002400
    Order: 1
    Author Affiliations:
    • EV Group, Austria
  • Author Name: M. Bernauer
    Affiliation: EV Group, Austria
    Author URL: https://ieeexplore.ieee.org/author/37088717909
    ID: 37088717909
    Order: 2
    Author Affiliations:
    • EV Group, Austria
  • Author Name: T. Wagenleitner
    Affiliation: EV Group, Austria
    Author URL: https://ieeexplore.ieee.org/author/37670599900
    ID: 37670599900
    Order: 3
    Author Affiliations:
    • EV Group, Austria
  • Author Name: M. Heilig
    Affiliation: EV Group, Austria
    Author URL: https://ieeexplore.ieee.org/author/37088717674
    ID: 37088717674
    Order: 4
    Author Affiliations:
    • EV Group, Austria
  • Author Name: F. Kurz
    Affiliation: EV Group, Austria
    Author URL: https://ieeexplore.ieee.org/author/38565146900
    ID: 38565146900
    Order: 5
    Author Affiliations:
    • EV Group, Austria
  • Author Name: S. Lhostis
    Affiliation: STMicroelectronics, Crolles cedcx, France
    Author URL: https://ieeexplore.ieee.org/author/37396261500
    ID: 37396261500
    Order: 6
    Author Affiliations:
    • STMicroelectronics, Crolles cedcx, France
  • Author Name: E. Deloffre
    Affiliation: STMicroelectronics, Crolles cedcx, France
    Author URL: https://ieeexplore.ieee.org/author/37688097800
    ID: 37688097800
    Order: 7
    Author Affiliations:
    • STMicroelectronics, Crolles cedcx, France
  • Author Name: A. Jouve
    Affiliation: CEA, LETI, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37401785900
    ID: 37401785900
    Order: 8
    Author Affiliations:
    • CEA, LETI, Grenoble, France
  • Author Name: V. Balan
    Affiliation: CEA, LETI, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37583784300
    ID: 37583784300
    Order: 9
    Author Affiliations:
    • CEA, LETI, Grenoble, France
  • Author Name: L. Chitu
    Affiliation: Materials Center Leoben Forschung GmbH (MCL), Leoben, Austria
    Author URL: https://ieeexplore.ieee.org/author/37085751349
    ID: 37085751349
    Order: 10
    Author Affiliations:
    • Materials Center Leoben Forschung GmbH (MCL), Leoben, Austria

Image Sensor

• sensor_type: CMOS
• resolution: not explicitly stated
• dynamic_range: not explicitly stated
• pixel_size: not explicitly stated
• dark_current: not explicitly stated

Optical Data

• focal_length: not explicitly stated
• aperture: not explicitly stated
• field_of_view: not explicitly stated
• distortion: not explicitly stated

Performance Metrics

• frame_rate: not explicitly stated
• signal_to_noise_ratio: not explicitly stated
• sensitivity: not explicitly stated
• shutter_speed: not explicitly stated
• power_consumption: not explicitly stated
• noise: not explicitly stated

Applications & Benefits

• cell_imaging: Back-side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor (CIS) applications are mentioned.
• benefits: Enhanced functionality and performance due to improved bonding techniques, which enable lower misalignment and thus better image quality.

Supporting Organizations

• supported_by: POLIS, an ENIAC Joint Undertaking project; Die Österreichische Forschungsförderungsgesellschaft FFG.

Manuscript Details

• publication_date: 2-4 Dec. 2015

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_1967b025-b0ac-4354-bf3b-c8e8ff024874-200_nm_wafertowafer_overlay_accuracy_in_wafer_level_cusio2_hybrid_bonding_for_bsi_cis.json