180Nm Gate Length Amorphous Ingazno Thin Film Transistor For High Density Image Sensor Applications

• doi: 10.1109/IEDM.2010.5703406
• title: 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications
• publisher: IEEE
• isbn: 978-1-4244-7419-6
• issn: 0163-1918
• partnum: 10CH38248
• rank: 28
• access_type: LOCKED
• content_type: Conferences
• abstract: In this article, we propose a novel hybrid complementary metal oxide semiconductor (CMOS) image sensor architecture utilizing nanometer scale amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFT) combined with a conventional Si photo diode. This approach will overcome the loss of quantum efficiency and image quality due to the downscaling of the photodiode. The 180nm gate length a-IGZO TFT exhibits remarkable short channel device performance including a low 1/f noise and a high output gain, despite fabrication temperatures as low as 200°C. The excellent device performance has been achieved by a double layer gate dielectric (Al2O3/SiO2) and a trapezoidal active region formed by a tailored etching process. A self aligned top gate structure was employed for low parasitic capacitance. 3D process simulation tools were applied to optimize a four pixel CMOS image sensor structure. The results demonstrate how our stacked hybrid device approach contributes to new device strategies in image sensor architectures. We expect that this approach is applicable to numerous devices and systems in future micro- and nano-electronics.
• article_number: 5703406
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5703406
• html_url: https://ieeexplore.ieee.org/document/5703406/
• abstract_url: https://ieeexplore.ieee.org/document/5703406/
• publication_title: 2010 International Electron Devices Meeting
• conference_location: San Francisco, CA, USA
• conference_dates: 6-8 Dec. 2010
• publication_number: 5692854
• is_number: 5703218
• publication_year: 2010
• publication_date: 6-8 Dec. 2010
• start_page: 21.3.1
• end_page: 21.3.4
• citing_paper_count: 26
• citing_patent_count: 153
• download_count: 3182
• insert_date: 20110128
• index_terms:
  • ieee_terms:
    • Logic gates
    • Thin film transistors
    • CMOS image sensors
    • Pixel
    • Dielectrics
    • Performance evaluation
    • Argon
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Active Region
    • Photodiode
    • Quantum Efficiency
    • Low Noise
    • Nanometer Scale
    • Gate Dielectric
    • Gate Insulator
    • Top Gate
    • Excellent Device
    • Pellucida
    • See-through
    • Transparent Materials
    • Optical Transparency
    • Drying Process
    • Dry Etching
    • Low Transparency
    • Ar Plasma
    • Subthreshold Slope
    • Amorphous Semiconductors
    • Dry Etching Process
• isbn_formats:
  • format: Online ISBN, value: 978-1-4244-7419-6, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4424-7418-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-7420-2, isbnType: New-2005
• authors:
  • Author Name: Sanghun Jeon
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087197782
    ID: 37087197782
    Order: 1
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Sungho Park
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087660361
    ID: 37087660361
    Order: 2
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Ihun Song
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087420152
    ID: 37087420152
    Order: 3
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Ji-Hyun Hur
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37088680145
    ID: 37088680145
    Order: 4
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Jaechul Park
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087662865
    ID: 37087662865
    Order: 5
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Sunil Kim
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087311564
    ID: 37087311564
    Order: 6
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Sangwook Kim
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087446184
    ID: 37087446184
    Order: 7
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Huaxiang Yin
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087295540
    ID: 37087295540
    Order: 8
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Eunha Lee
    Affiliation: Analytical Engineering Center, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087420016
    ID: 37087420016
    Order: 9
    Author Affiliations:
    • Analytical Engineering Center, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Seungeon Ahn
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37088679692
    ID: 37088679692
    Order: 10
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Hojung Kim
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087664277
    ID: 37087664277
    Order: 11
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: Changjung Kim
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087660108
    ID: 37087660108
    Order: 12
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
  • Author Name: U-In Chung
    Affiliation: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087190581
    ID: 37087190581
    Order: 13
    Author Affiliations:
    • Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin si, Gyeonggi, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: nanometer scale
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: low 1/f noise

Applications & Benefits

• cell_imaging: High density CMOS image sensor for applications in smartphones, medical devices, and automotive systems.
• benefits: Improved quantum efficiency and image quality with hybrid CMOS structure.

Supporting Organizations

• supported_by: Samsung Advanced Institute of Technology

Manuscript Details

• publication_date: 6-8 Dec. 2010

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • optical data
  • performance_metrics
  • applications_benefits
  • supporting_organizations

Processed JSON Filename

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